An acoustic resonator device includes a composite first electrode disposed over a substrate; a piezoelectric layer disposed on the composite first electrode, the piezoelectric layer including a piezoelectric material doped with scandium for improving piezoelectric properties of the piezoelectric layer; and a second electrode disposed on the piezoelectric layer. The composite first electrode includes a base electrode layer disposed over the substrate; a temperature compensation layer disposed on the base electrode layer; a seed interlayer disposed on the temperature compensation layer, the seed interlayer having a thickness between about 5 Å and about 150 Å; and a conductive interposer layer disposed on at least the seed interlayer, at least a portion of the conductive interposer layer contacting the base electrode layer. The piezoelectric layer has a negative temperature coefficient and the temperature compensation layer has a positive temperature coefficient that at least partially offsets the negative temperature coefficient of the piezoelectric layer.

An elastic wave device propagating plate waves includes a stack of an acoustic reflection layer, a piezoelectric layer, and IDT electrode on a supporting substrate. The piezoelectric layer is thinner than a period of fingers of the IDT electrode. The acoustic reflection layer includes low-acoustic-impedance layers and high-acoustic-impedance layers. The low-acoustic-impedance layers are made of SiO.sub.2, and the high-acoustic-impedance layers are made of at least one material selected from the group consisting of W, LiTaO.sub.3, Al.sub.2O.sub.3, AlN, LiNbO.sub.3, SiN, and ZnO.

A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO.sub.3, and first and second electrodes that are provided in contact with the piezoelectric thin plate. The piezoelectric bulk wave device utilizes the thickness shear mode of the piezoelectric thin plate made of LiTaO.sub.3, and of the Euler Angles (φ, θ, φ) of LiTaO.sub.3, φ is 0°, and θ is in the range of not less than 54° and not more than 107°.

The present invention aims to provide an excellent piezoelectric composition and an excellent piezoelectric element if the piezoelectric properties especially a high spontaneous polarization and a sufficiently high resistivity, the low pollution, the environment and the ecology are considered. In the piezoelectric composition, the main component contains the substance represented by the following formula with a perovskite-typed structure, (Bi.sub.(0.5x+y+z)Na.sub.0.5x).sub.m(Ti.sub.x+0.5yMg.sub.0.5yAl.sub.z)O.sub.3. Wherein, 0.01≦x≦0.8, 0.2≦y≦0.8, 0.01≦z≦0.6, 0.75≦m≦1.0, and x+y+z=1.

A synchronized piezoelectric and luminescence (SPL) material includes a core layer including light-emitting particles and a shell layer which is attached onto a surface of the core layer and includes ligands having a piezoelectric property. Therefore, a piezoelectric property and a luminescent property can be simultaneously implemented using a single SPL material in which piezoelectric ligands and light-emitting particles are chemically coupled.

A shear vibration-based piezoelectric composite material and a preparation method thereof are disclosed. The piezoelectric composite material includes a piezoelectric material and the passive material. The piezoelectric material includes a piezoelectric material polarized along the x-axis positive and a piezoelectric material negatively polarized along the x-axis. The piezoelectric materials in the two polarization directions are alternately arranged along the x-axis direction. The passive material includes a filling layer, a transition layer, and a planar layer. The filling layer is disposed between every two adjacent piezoelectric materials. The planar layer is located outer two surfaces perpendicular to the z-axis of the piezoelectric material. The planar layer on one side is fixedly connected to the filling layer in the odd-numbered position via the transition layer. The planar layer on the other side is fixedly connected to the filling layer in the even-numbered position via the transition layer. The piezoelectric composite material can be used to prepare an underwater acoustic transducer, a hydrophone, piezoelectric energy harvesters, and the like. The invention innovatively converts shear vibrations into the thickness vibrations of the upper and lower surfaces of the composite material, thereby improving the performance of the composite material.

Growth of single crystals of lead zirconate titanate (PZT) and other perovskites is accomplished by liquid phase epitaxy onto a substrate of suitable structural and lattice parameter match. A solvent and specific growth conditions for stable growth are required to achieve the desired proportions of Zr and Ti.

A magnetic piezoelectric composite adjusts magnetic anisotropy strength in a bimetallic member and includes: a piezoelectric layer to produce a strain in response to receipt of a strain voltage; and the bimetallic member disposed on the piezoelectric layer, the bimetallic member including: a plurality of metal layers, such that a second metal layer is interposed between a pair of first metal layers, the bimetallic member being ferromagnetic; and a magnetic anisotropy strength that changes in response to receipt of the strain from the piezoelectric layer.

A piezoelectric thin film is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at % or less. When producing the piezoelectric thin film, scandium and aluminum are sputtered simultaneously on a substrate from a scandium aluminum alloy target material having a carbon atomic content of 5 at % or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.

Technologies are generally described for generating electrical power from piezoelectric power. Example devices/systems described herein may use one or more of a piezoelectric device, a plurality of solid particles, and/or a container. In various examples, an electrical power generator apparatus is described, where the apparatus may be configured to provide an electrical signal upon application of a mechanical stress to the piezoelectric device. Some example apparatus may also be configured to contain the plurality of solid particles in the container, which may be coupled to at least a portion of a surface of the piezoelectric device. When a mechanical force is exerted on the plurality of solid particles, the plurality of solid particles may be effective to receive at least a portion of the mechanical force and responsively apply the mechanical stress to the piezoelectric device.