The solar cell includes a substrate having electrode regions and non-electrode regions defined alternatively, where a surface of the electrode regions has a first surface structure, a surface of the non-electrode regions has a second surface structure, the first surface structure has a smaller roughness than the second surface structure, and the second surface structure includes multiple first protrusion structures. The solar cell further includes a tunneling dielectric layer, and a first doped conductive layer arranged on the tunneling dielectric layer. The solar cell further includes a passivation layer arranged on the non-electrode regions and the first doped conductive layer and a first electrode arranged in the electrode regions. The first electrode penetrates the passivation layer to be in electrical contact with the first doped conductive layer.

The present invention provides an optical semiconductor device for improving minimization and increase of detection precision. An optical semiconductor device A1 of the present invention includes: a substrate 1, including a semiconductor material, and including a main surface 111 and a back surface 112; a semiconductor light-emitting element 7A at the substrate; a semiconductor light-receiving element 7B at the substrate; a conductive layer 3, conducting the semiconductor light-emitting element 7A and the semiconductor light-receiving element 7B; and an insulating layer 2 between at least a portion of the conductive layer 3 and the substrate; wherein the substrate 1 includes a recess 14 recessed from the main surface 111 and including a bottom surface 142A of a light-emitting side recess where the semiconductor light-emitting element 7A is disposed, and a bottom surface 142B of a light-receiving side recess where the semiconductor light-receiving element 7B is disposed; a light-emitting side transparent portion 18A for light from the semiconductor light-emitting element 7A to pass through the bottom surface 142A of the light-emitting side recess to the back surface 112; and a light-receiving side transparent portion 18B for light from the back surface 112 to pass through the bottom surface 142B of the light-receiving side recess to the semiconductor light-receiving element 7B.

A light-emitting device includes first and second light-emitting elements, upper submounts, and a lower submount. The upper submounts include a first submount having a first upper surface and a first lateral surface located on a same side as an emission end surface of the first light-emitting element, and a second submount having a second upper surface and a second lateral surface located on a same side as an emission end surface of the second light-emitting element. In a top plan view, the first lateral surface is located forward relative to the second lateral surface, and the emission end surface of the first light-emitting element is located forward relative to the emission end surface of the second light-emitting element. At least a portion of the first lateral surface is protruded forward relative to an edge along which an upper surface and a lateral surface of the lower submount meet.

A light-emitting device includes first and second light-emitting elements, upper submounts, and a lower submount. The upper submounts include a first submount having a first upper surface and a first lateral surface located on a same side as an emission end surface of the first light-emitting element, and a second submount having a second upper surface and a second lateral surface located on a same side as an emission end surface of the second light-emitting element. In a top plan view, the first lateral surface is located forward relative to the second lateral surface, and the emission end surface of the first light-emitting element is located forward relative to the emission end surface of the second light-emitting element. At least a portion of the first lateral surface is protruded forward relative to an edge along which an upper surface and a lateral surface of the lower submount meet.

According to one embodiment, a semiconductor device includes: a substrate including a first surface extending in a first direction and a second direction; a first transistor; a light receiver; a light emitter provided on the light receiver; an input terminal provided on the first surface of the substrate; a first conductor configured to electrically couple a source electrode of the first transistor and a first electrode of the light receiver; a second conductor configured to electrically couple a gate electrode of the first transistor and a second electrode of the light receiver; and a third conductor configured to couple a third electrode of the light emitter and the input terminal, wherein the light emitter and the input terminal are provided at positions overlapping with each other in a third direction, and the third conductor is provided inside the substrate.

An optical waveguide package includes a substrate, a cladding on the substrate, a core in the cladding, and a metal member. The cladding includes a first surface facing the substrate, a second surface, and an element-receiving area being open in the second surface. The core includes a first incident end face and a second incident end face exposed in the element-receiving area, and an emission end face connected to the first incident end face and the second incident end face with a waveguide. The metal member is located on the second surface and surrounds the element-receiving area. The waveguide includes a first branching path connected to the first incident end face, a second branching path connected to the second incident end face, and a merging portion merging the first branching path and the second branching path. The merging portion is outside an area surrounded by the metal member.

An optical waveguide package includes a substrate, a cladding on the substrate, a core in the cladding, and a metal member. The cladding includes a first surface facing the substrate, a second surface, and an element-receiving area being open in the second surface. The core includes a first incident end face and a second incident end face exposed in the element-receiving area, and an emission end face connected to the first incident end face and the second incident end face with a waveguide. The metal member is located on the second surface and surrounds the element-receiving area. The waveguide includes a first branching path connected to the first incident end face, a second branching path connected to the second incident end face, and a merging portion merging the first branching path and the second branching path. The merging portion is outside an area surrounded by the metal member.

A photo coupler single chip structure and a manufacturing method thereof are provided. The photo coupler single chip structure includes an epitaxial substrate, a light-emitting unit, an electrical insulation layer and a light-receiving unit. The light-emitting unit is disposed on the epitaxial substrate. The electrical insulation layer is disposed on the light-emitting unit. The light-receiving unit is disposed on the electrical insulation layer. The light-emitting unit can form an optical signal in response to an input signal. The light-receiving unit will directly absorb the optical signal through the electrical insulating layer and convert it into an output signal.

A light-emitting device includes first and second semiconductor laser elements, a package, and first and second reflection regions. The first and second reflection regions are configured to respectively reflect first and second lights emitted from the first and second semiconductor laser elements. A distance from a first light-emitting point to a first irradiation spot on the first reflection region irradiated with light propagating along an optical axis of the first light is shorter than a distance from the second light-emitting point to a second irradiation spot on the second reflection region irradiated with light propagating along an optical axis of the second light. The first light has an angle of divergence in a fast-axis direction greater than an angle of divergence in the fast-axis direction which the second light has.

A light-emitting device includes first and second semiconductor laser elements, a package, and first and second reflection regions. The first and second reflection regions are configured to respectively reflect first and second lights emitted from the first and second semiconductor laser elements. A distance from a first light-emitting point to a first irradiation spot on the first reflection region irradiated with light propagating along an optical axis of the first light is shorter than a distance from the second light-emitting point to a second irradiation spot on the second reflection region irradiated with light propagating along an optical axis of the second light. The first light has an angle of divergence in a fast-axis direction greater than an angle of divergence in the fast-axis direction which the second light has.