The present disclosure provides a method for manufacturing a thin film transistor array substrate and a display panel. The method includes: forming a plurality of dispersed metal oxide grains on a substrate; forming an amorphous metal oxide semiconductor layer in contact with the plurality of metal oxide grains, and at least one metal element in the metal oxide grain is same as metal elements in the metal oxide semiconductor layer; performing an annealing process on the amorphous metal oxide semiconductor layer, to obtain a crystallized metal oxide semiconductor layer.

Disclosed are a crystalline p-type semiconductor film having a plurality of crystal grains with an average grain size of submicron and including a tin-doped copper halide, and a semiconductor device, a thin film transistor, a diode, and an electronic device including the same.

There is provided a display device including: a light emitting element; and a drive transistor (DRTr) that includes a coupling section (W1) and a plurality of channel sections (CH) coupled in series through the coupling section (W1), wherein the drive transistor (DRTr) is configured to supply a drive current to the light emitting element.

The present disclosure discloses an array substrate and a display device including thereof. The array substrate includes a substrate, a shield metal over the substrate and a thin film transistor including an active layer with a channel region over the shield metal and a thermal gradient portion in at least one of the shield metal, the active layer and the array substrate so as to lower a temperature of a first area of the channel region than a temperature of a second area of the channel region. A cooling zone between the channel region and the shield metal is defined by the thermal gradient portion. The array substrate and a display device including the array substrate including the thermal gradient portion that defines the cooling zone between the thin film transistor and the shield metal can improves Kink effect, maintain high driving voltage, increase on current and/or improve switching properties.