The present disclosure relates to a monocrystalline silicon ingot, a silicon wafer, a solar cell, a solar cell string, and a solar module. In an example monocrystalline silicon ingot, a concentration of an antimony element is 0.04E+16 atom/cm.sup.3 to 2E+16 atom/cm.sup.3 in the monocrystalline silicon ingot.

The present disclosure relates to a monocrystalline silicon ingot, a silicon wafer, a solar cell, a solar cell string, and a solar module. In an example monocrystalline silicon ingot, a concentration of an antimony element is 0.04E+16 atom/cm.sup.3 to 2E+16 atom/cm.sup.3 in the monocrystalline silicon ingot.

The present disclosure provides a silicon wafer, a solar cell, and a solar module. In an example silicon wafer, a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm.sup.3 to 2E+16 cm.sup.3, and a minority carrier lifetime of the silicon wafer is greater than or equal to 200 s.

The present disclosure provides a silicon wafer, a solar cell, and a solar module. In an example silicon wafer, a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm.sup.3 to 2E+16 cm.sup.3, and a minority carrier lifetime of the silicon wafer is greater than or equal to 200 s.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.

The present disclosure provides an interdigitated back contact cell and a manufacturing method thereof. The interdigitated back contact cell includes: a substrate including a front side and a back side, the front side being arranged opposite to the back side; where, along a first direction, first functional regions and second functional regions are alternately arranged on the back side of the substrate; an isolation region is arranged between every adjacent first functional region and second functional region; and the first emitter is spatially isolated from one adjacent second emitter by a corresponding isolation region; and the first diffusion layer is in contact with at least one adjacent second diffusion layer in a corresponding region of a corresponding isolation region. The interdigitated back contact cell provided by the present disclosure has a lower reverse breakdown voltage, a high component reliability, and a high cell efficiency.

The present disclosure provides an interdigitated back contact cell and a manufacturing method thereof. The interdigitated back contact cell includes: a substrate including a front side and a back side, the front side being arranged opposite to the back side; where, along a first direction, first functional regions and second functional regions are alternately arranged on the back side of the substrate; an isolation region is arranged between every adjacent first functional region and second functional region; and the first emitter is spatially isolated from one adjacent second emitter by a corresponding isolation region; and the first diffusion layer is in contact with at least one adjacent second diffusion layer in a corresponding region of a corresponding isolation region. The interdigitated back contact cell provided by the present disclosure has a lower reverse breakdown voltage, a high component reliability, and a high cell efficiency.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.