Described herein are microfluidic devices and methods of detecting an analyte in a sample that includes flowing the sample though a microfluidic device, wherein the presence of the analyte is detected directly from the microfluidic device without the use of an external detector at an outlet of the microfluidic device. In a more specific aspect, detection is performed by incorporating functional nanopillars, such as detector nanopillars and/or light source nanopillars, into a microchannel of a microfluidic device.

A material for photo-electric conversion has a multi-layered diamond-like film including an upper layer possessing electrical conductivity of one type and a lower layer possessing electrical conductivity of another different type, and a photo-electric converter is provided with this material and converts light into electric current.

The present disclosure provides an avalanche photodetector and a preparation method therefor. The avalanche photodetector comprises: a substrate, the surface of which comprises a first semiconductor layer; and a second semiconductor layer located on the substrate, wherein the first semiconductor layer comprises a first P-type doped region, a second P-type doped region, a third N-type doped region, a first intrinsic region, a third P-type doped region, a second intrinsic region, a second N-type doped region and a first N-type doped region which are sequentially arranged in a first direction, the dopant concentrations of the first to third P-type doped regions are sequentially decreased, the dopant concentrations of the first to third N-type doped regions are sequentially decreased, and the first direction is an electron flow direction; the second semiconductor layer sequentially covers part of the second P-type doped region, the third N-type doped region, the first intrinsic region and the third P-type doped region in the first direction; the first N-type doped region is connected to a first electrode; the third P-type doped region is connected to a second electrode; and the first N-type doped region is connected to a third electrode.

This photovoltaic device is provided with a crystalline semiconductor substrate, and a first amorphous layer formed on the main surface of the substrate. At the interface between the substrate and the first amorphous layer, electrical conductivity can be improved while suppressing an increase in recombination centers, and power generation efficiency can be improved by having a p-type dopant density profile that decreases stepwise in the film thickness direction from the vicinity of the interface with the substrate.

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist essentially of a corresponding donor or acceptor material.

A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.

A process for impurification of semiconductor materials, comprising adjacent compensated codoping comprising: (a) providing a multicomponent host material AEGJ . . . ; (b) selecting two impurities Q and X codopants elements under the following scheme: (i) considering the host A and G, impurity Q is the chemical element with atomic number Z.sub.A1 and impurity X is the chemical element with atomic number Z.sub.G+1; or impurity Q is the chemical element with atomic number Z.sub.A+1 and impurity X is the chemical element with atomic number Z.sub.G1; or (ii) considering the host A and G, impurity Q is the chemical element with atomic number Z.sub.A2 and impurity X is the chemical element with atomic number Z.sub.G+2; or impurity Q is the chemical element with atomic number Z.sub.A+2 and impurity X is the chemical element with atomic number Z.sub.G2; or (iii) considering the host A and G, impurity Q is the chemical element with atomic number Z.sub.A1 and impurity X is the chemical element with atomic number Z.sub.G+2; or impurity Q is the chemical element with atomic number Z.sub.A+2 and impurity X is the chemical element with atomic number Z.sub.G1; and (c) performing the host adjacent codoping process with the selected impurities.