The technique relates to a method for preparing a nanomesh metal membrane 5 transferable on a very wide variety of supports of different types and shapes comprising at least one step of de-alloying 1 a thin layer 6 of a metal alloy deposited on a substrate 7, said method being characterized in that said thin layer 6 has a thickness less than 100 nm, and in that said de-alloying step 1 is carried out by exposing said thin layer 6 to an acid vapor in the gas phase 8, in order to form said nanomesh metal membrane 5.

The technology disclosed herein concerns a process for fabricating devices with Graphene Nanogap Electrodes (GNE).

Method for manufacturing avalanche photodetector, including forming multiplication layer on wafer; etching closed groove on surface of the multiplication layer, so that depth of the closed groove is greater than or equal to thickness of the multiplication layer, but less than total thickness of the wafer and multiplication layer combined; filling the groove with highly-doped polycrystalline silicon of same conductivity type as multiplication layer; forming, on upper surface of multiplication layer, inside groove, avalanche amplifier as mesa structure, by forming contact layer on multiplication layer, while simultaneously forming photoconverter outside contact layer, and etching away portion of multiplication layer in the photoconverter to depth less than thickness of the multiplication layer; forming dielectric layer on multiplication layer where etching took place, its thickness equal to the depth of multiplication layer that was etched away; forming first electrode of transparent material on surfaces of contact and dielectric layers; forming second electrode.

In one aspect, a solar cell includes: a monocrystalline silicon substrate; an intrinsic amorphous silicon layer disposed on the monocrystalline silicon substrate; a doped amorphous silicon layer disposed on the intrinsic amorphous silicon layer; a transparent conductive film layer disposed on the doped amorphous silicon layer; and an electrode disposed on the transparent conductive film layer and in direct contact with the doped amorphous silicon layer.

A method for manufacturing a solar cell which simplifies the formation of a transparent electrode layer. The method includes forming conductive semiconductor layers on the back surface side of a substrate, forming a transparent conductive film on the conductive semiconductor layers, forming an uncured film of a metal electrode layer on the conductive semiconductor layers, patterning the transparent conductive film to form transparent electrode layers, and forming the metal electrode layers, in this order. In the metal electrode layer uncured film forming, a printing material is printed and dried to form the uncured film of the metal electrode layer; in the transparent electrode layer forming, the uncured film of the metal electrode layer is used as a mask to pattern the transparent conductive film; and in the metal electrode layer forming, the uncured film of the metal electrode layer is fired and cured to form the metal electrode layers.

The present disclosure relates to a thin-film solar cell capable of independently adjusting transparency and color, which is capable of selectively controlling transmittance while independently adjusting external and internal colors within a range in which degradation of photoelectric conversion efficiency is minimized, and a method of manufacturing the same, and the thin-film solar cell capable of independently adjusting transparency and color according to the present disclosure includes a structure in which a back transparent electrode, a light absorption layer, a front transparent electrode, and a front color layer are sequentially stacked on a transparent substrate, in which a light transmission part region, to which the back transparent electrode is exposed, is formed by removing the front color layer, the front transparent electrode, and the light absorption layer.

A plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.

The present invention relates to a CIGS solar cell having both transparency and flexibility and a method of manufacturing the same. The method of manufacturing a CIGS solar cell having both transparency and flexibility according to the present invention is characterized by including the steps of: preparing a carrier substrate on which a transparent polymer film is stacked; sequentially stacking a rear transparent electrode, a CIGS light-absorbing layer, and a front transparent electrode on the transparent polymer film; irradiating a long-wavelength laser to an interface between the rear transparent electrode and the CIGS light-absorbing layer in some areas to remove the CIGS light-absorbing layer and the front transparent electrode, thereby forming a light-transmitting region that exposes the rear transparent electrode; and irradiating a short-wavelength laser to an interface between the carrier substrate and the transparent polymer film to separate the carrier substrate and the transparent polymer film from each other.

The disclosure relates to methods of depositing a molybdenum dichalcogenide on a surface of a semiconductor substrate from a gas phase. The methods utilize an oxygen and halogen comprising molybdenum precursor and, in some embodiments, the deposition methods may be selective. The methods may be cyclic deposition methods, in particular atomic layer deposition methods. The disclosure further relates to a molybdenum dichalcogenide layer deposited according to the methods herein, as well as to semiconductor processing assemblies arranged to execute said methods.

According to one embodiment, a solar cell including a transparent first electrode, an n-type layer, a light absorption layer that contains an inorganic material, and a second electrode is provided. The n-type layer is present between the first electrode and the light absorption layer. The light absorption layer is present between the n-type layer and the second electrode. The first electrode has a gap penetrating the first electrode. The n-type layer, the light absorption layer, and the second electrode are each partially included in the gap, and a part of the n-type layer, a part of the light absorption layer, and a part of the second electrode are arranged in this order in the gap.