A flexible wireless communication device with high position accuracy and low cost by a simple process is described, including a wireless communication device and a method for manufacturing a wireless communication device formed by bonding a first film substrate on which at least a circuit is formed and a second film substrate on which an antenna is formed, in which the circuit includes a transistor, and the transistor is formed by a step of forming a conductive pattern on the first film substrate, a step of forming an insulating layer on the film substrate on which the conductive pattern is formed, and a step of applying a solution including an organic semiconductor and/or a carbon material on the insulating layer and drying the solution to form a semiconductor layer.

Disclosed are an organic semiconductor element, a fabrication method thereof, woven and non-woven fabric structures therewith, and a semiconductor device therewith. The organic semiconductor element comprising an organic semiconductor layer; a linear source electrode and a linear drain electrode provided in the organic semiconductor layer and spaced apart from and parallel to each other; a linear gate electrode provided on the organic semiconductor layer to cross the linear source and drain electrodes; and an electrolyte layer in contact with the organic semiconductor layer and the linear gate electrode.

Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c): (a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group), (b) a second organic compound represented by Formula (2) below, and (c) a photocationic polymerization initiator

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A display device with a narrow bezel is provided. The display device includes a pixel circuit and a driver circuit which are provided on the same plane. The driver circuit includes a selection circuit and a buffer circuit. The selection circuit includes a first transistor. The buffer circuit includes a second transistor. The first transistor has a region overlapping with the second transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor. One of a source and a drain of the second transistor is electrically connected to the pixel circuit.

A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

The invention relates to a method for producing a vertical organic field-effect transistor, in which a vertical organic field-effect transistor with a layer arrangement is produced on a substrate, said layer arrangement including transistor electrodes, namely a first electrode (23; 24), a second electrode (23; 24) and a third electrode (32), electrically insulating layers (25; 34) and an organic semiconductor layer (28). In addition, a vertical organic field-effect transistor is provided, which includes a layer arrangement with transistor electrodes on a substrate (21).

A thin-film transistor array includes a substrate and thin-film transistors positioned in matrix on the substrate. The thin-film transistors each include source and drain electrodes formed on a gate insulation layer, and a semiconductor layer formed on the gate insulation layer and positioned between the source and drain electrodes. The semiconductor layer is formed in stripes over the plurality of thin-film transistors such that one of the stripes has a long axis direction coinciding with a channel width direction of one of the thin-film transistors. The semiconductor layer has a cross section in a short axis direction of the stripe such that a thickness of the semiconductor layer gradually decreases outwardly from a center portion of the stripe.

A flexible array substrate structure and manufacturing method thereof are disclosed, in which the patterning process of an organic semi-conductive layer is achieved by using the inside wall of the opening of a color film layer as a bank, so that one mask can be saved. Also, a process for manufacturing a device can be simplified by an improved device structure, so that the flexible array substrate structure of the invention can be obtained by only using four masks.

A method for preparing an ohmic contact electrode of a GaN-based device. Said method comprises the following steps: growing a first dielectric layer (203) on an upper surface of a device (S1); implanting silicon ions and/or indium ions in a region of the first dielectric layer (203) corresponding to an ohmic contact electrode region, and in the ohmic contact electrode region of the device (S2); growing a second dielectric layer (206) on an upper surface of the first dielectric layer (203) (S3); activating the silicon ions and/or the indium ions by means of a high temperature annealing process, so as to form an N-type heavy doping (S4); respectively removing portions, corresponding to the ohmic contact electrode region, of the first dielectric layer (203) and the second dielectric layer (206) (S5); growing a metal layer (208) on the upper surface of the ohmic contact electrode region of the device, so as to form an ohmic contact electrode (S6). The ohmic contact electrode prepared by the method can ensure that the metal layer (208) has flat surfaces, smooth and regular edges, and said electrode has stable device breakdown voltage, and is reliable and has a long service life.

Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.