Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not require very low leakage current. The switching transistors can require low leakage current to allow the pixel capacitor to retain the signal level for accurate OLED device emission, preventing abnormal displays or cross talks.

An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.

A semiconductor device includes a substrate, a first thin film transistor supported on the substrate and having a first active layer that primarily contains a first oxide semiconductor, and second thin film transistor supported on the substrate and having a second active layer that primarily contains a second oxide semiconductor with a higher mobility than the first oxide semiconductor. The first active layer and the second active layer are positioned on the same insulating layer and contact the same insulating layer.

A display includes a pixel circuit. The pixel circuit includes a light emitting diode, a first transistor, a second transistor and a third transistor. The first transistor includes a first semiconductor layer. The first transistor has a first control terminal, a second terminal, and a third terminal electrically connected to the light emitting diode. The second transistor includes a second semiconductor layer, and is electrically connected to the third terminal. The third transistor is electrically connected to the first control terminal. A material of the first semiconductor layer is different from a material of the second semiconductor layer.

A display may have an array of pixels controlled by display driver circuitry. The pixels may have pixel circuits. In liquid crystal display configurations, each pixel circuit may have an electrode that applies electric fields to an associated portion of a liquid crystal layer. In organic light-emitting diode displays, each pixel circuit may have a drive transistor that applies current to an organic light-emitting diode in the pixel circuit. The pixel circuits and display driver circuitry may have thin-film transistor circuitry that includes transistor such as silicon transistors and semiconducting-oxide transistors. Semiconducting-oxide transistors and silicon transistors may be formed on a common substrate. Semiconducting-oxide transistors may have polysilicon layers with doped regions that serve as gates. Semiconducting-oxide channel regions overlap the gates. Transparent conductive oxide and metal may be used to form source-drain terminals that are coupled to opposing edges of the semiconducting oxide channel regions.

The present invention provides a method for manufacturing an LTPS TFT substrate structure and a structure of an LTPS TFT substrate. The method for manufacturing the LTPS TFT substrate structure according to the present invention provides patterns of a thermally conductive electrical-insulation layer that are of the same size and regularly distributed under a buffer layer of a driving TFT area to absorb heat in a subsequent excimer laser annealing process so as to speed up the cooling rate of amorphous silicon to form crystal nuclei that gradually grow up in the annealing process. Since the thermally conductive electrical-insulation layer is made up of regularly distributed and size-consistent patterns, crystal grains of a polycrystalline silicon layer located in the driving TFT area show improved consistency and homogeneity and the grain sizes are relatively large to ensure the consistency of electrical property of the driving TFT. The structure of the LTPS TFT substrate structure according to the present invention includes patterns of a thermally conductive electrical-insulation layer that are regularly distributed under a buffer layer of a driving TFT area and have the same size, so that crystal grains of a polycrystalline silicon layer located in the driving TFT area show improved consistency and homogeneity and the grain sizes are relatively large and thus, the electrical property of the driving TFT is consistent.

A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate.

The present disclosure generally relates to an improved large area substrate thin film transistor device, and method of fabrication thereof. More specifically, amorphous and LTPS transistors are formed by first forming an amorphous silicon layer, annealing the amorphous silicon layer to form polycrystalline silicon, depositing a masking layer over a first portion of the polycrystalline silicon layer, implanting a second portion of the polycrystalline silicon layer with an amorphizing species, and removing the masking layer.

There is provided a display device including: a light emitting element; and a drive transistor (DRTr) that includes a coupling section (W1) and a plurality of channel sections (CH) coupled in series through the coupling section (W1), wherein the drive transistor (DRTr) is configured to supply a drive current to the light emitting element.

There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).