A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

A semiconductor nanocrystal that emits green light having a peak emission with a full width at half maximum of about 30 nm or less at 100 C. and a method of making coated semiconductor nanocrystals are provided. Materials and other products including semiconductor nanocrsytals described herein and materials and other products including semiconductor nanocrystals prepared by a method described herein are also disclosed.

Disclosed are a photoelectronic device using a hybrid structure of silica nanoparticles and graphene quantum dots and a method of manufacturing the same. The photoelectronic device according to the present disclosure has a hybrid structure including graphene quantum dots (GQDs) bonded to surfaces of silica nanoparticles (SNPs), thereby increasing energy transfer efficiency.

The invention pertains to formation of a semiconducting portion (60) by epitaxial growth on a strained germination portion (40), comprising the steps in which a cavity (21) is produced under a structured part (11) by rendering free a support layer (30) situated facing the structured part (11), a central portion (40), termed the strained germination portion, then being strained; and a semiconducting portion (60) is formed by epitaxial growth on the strained germination portion (40), wherein the structured part (11) is furthermore placed in contact with the support layer (30) in such a way as to bind the structured part (11) of the support layer.

A light emitting diode includes an insulating substrate, a first MgO layer, a semiconductor carbon nanotube layer, a second MgO layer, a functional dielectric layer, a first electrode, and a second electrode. The semiconductor carbon nanotube layer has a first surface and a second surface. The first MgO layer coats entire the first surface. The second surface is divided into a first region and a second region. The first region is coated with the second MgO layer. The second MgO layer is covered by the functional dielectric layer. The second region is exposed. The first electrode is electrically connected to the first region. The second electrode is electrically connected to the second region.

The present invention provides a surface mounted light emitting apparatus which has long service life and favorable property for mass production, and a molding used in the surface mounted light emitting apparatus.

The surface mounted light emitting apparatus comprises the light emitting device 10 based on GaN which emits blue light, the first resin molding 40 which integrally molds the first lead 20 whereon the light emitting device 10 is mounted and the second lead 30 which is electrically connected to the light emitting device 10, and the second resin molding 50 which contains YAG fluorescent material and covers the light emitting device 10. The first resin molding 40 has the recess 40c comprising the bottom surface 40a and the side surface 40b formed therein, and the second resin molding 50 is placed in the recess 40c. The first resin molding 40 is formed from a thermosetting resin such as epoxy resin by the transfer molding process, and the second resin molding 50 is formed from a thermosetting resin such as silicone resin.

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

A common cathode electrode structure for vertical LED pixel package, includes a package carrier, vertical LED chips, a conductive column, an insulating isolation support, and a common cathode metal thin film layer. The vertical LED chips are arranged above package carrier, the package carrier includes anodes and a common cathode penetrating therethrough to be external connection point. The anodes are respectively corresponded and electrically connected to P electrodes of the vertical LED chips, and the conductive column is electrically connected to common cathode and N electrodes of vertical LED chips. The common cathode metal thin-film layer is formed on vertical LED chips, conductive column and insulating isolation support to electrically conduct the conductive column and the N electrodes. The anodes and common cathode are in the same plane, which can meet the requirements for embodying SMT for small-spacing LED display module.

Compositions, devices, and methods for optimizing photosynthetically active radiation by utilizing a composition comprising a quantum confinement material having an emission spectra of between 300 nm and 545 nm, and a quantum confinement material having an emission spectra of between 545 nm and 750 nm where the composition may be embedded in and/or coated on one or more transparent surfaces.