Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure. Electric fields arising from the respective p-n silicon junctions significantly facilitate a flow of the generated photocarriers between electric contact regions of the photodetector.

An integrated sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second bipolar junction transistors (BJTs). The first BJT has a base that is electrically coupled with the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second BJTs and the sensing structure are monolithically formed a common substrate.

An optical through silicon via is formed in a silicon substrate of an integrated circuit. A photo detector is formed within the integrated circuit and is optically coupled to a first side of the optical through silicon via. A light generating source optically coupled to a second side of the optical through silicon via is provided. The photo detector is configured to receive a light, generated by the light generating source, propagating through the optical through silicon via. The light, generated by the light generating source, is controlled by a signal generated by a signal generating source.

A photoelectric conversion device includes a photoelectric conversion unit which includes a phototransistor having a collector region, an emitter region, and a base region to generate an output current according to an intensity of incident light to the phototransistor, and a base potential setting unit which is configured to set up a base potential of the phototransistor so that the output current from the photoelectric conversion unit is equal to a predetermined current value.

A semiconductor bipolar phototransistor (PT) comprises a floating base consisting of a base (b) electrically coupled only to (i) an emitter (e) via an emitter junction (ej); and (ii) a collector (c) via a collector junction (cj) conductively, capacitively or inductively. A substantially planar semiconductor interface is formed between the semiconductor and a dielectric. A semiconductor volume of highest bandgap (Eg) whose bandgap is higher than the bandgap of the remaining semiconductor volume of the semiconductor bipolar phototransistor (PT) within about 1 micron linear distance from the substantially planar semiconductor interface with the dielectric. The emitter junction (ej) comprises an emitter junction (ej) portion with a bandgap lower than the bandgap of the highest bandgap volume. The base (b) comprises a base (b) portion with a bandgap lower than the bandgap of the highest bandgap volume. The collector junction (cj) comprises a collector junction (cj) portion with a bandgap lower than the bandgap of the highest bandgap volume. A first low-doped region of the highest bandgap volume resides within the emitter junction (ej). A second low-doped region of the highest bandgap volume resides within the base (b). A third low-doped region of the highest bandgap volume resides within the collector junction (cj). A minimum linear dimension of the highest bandgap volume is at least 10 nanometers. The highest bandgap volume is substantially single crystalline. The first, second, and third low-doped regions of the highest bandgap volume are not doped to higher than 10.sup.16/cm.sup.3.

The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.

Devices, systems and methods for operating and using an optically quenchable carbon-doped gallium nitride photoconductive semiconductor switch (PCSS) are described. An example method includes illuminating a carbon-doped gallium nitride material of the photoconductive semiconductor switch with a first laser light within a first range of wavelengths to trigger the photoconductive semiconductor switch to a conductive state, turning off or blocking the first laser light, and illuminating the carbon-doped gallium nitride material with a second laser light within a second range of wavelengths to trigger the photoconductive semiconductor switch to an insulating state. In this example, the first range of wavelengths comprises an ultraviolet (UV) or a blue wavelength range, the second range of wavelengths comprises an infrared (IR) or a red wavelength range, and switching from the conductive state to the insulating state occurs within a sub-nanosecond range.

A phototransistor is provided. The phototransistor includes a substrate, a light-receiving area, an emitter active area and an emitter electrode. The light-receiving area is disposed in the substrate. The emitter active area is disposed in a central area of the light-receiving area to maximize a distance between a contour edge of the emitter active area and that of the light-receiving area. The emitter electrode is electrically connected to the emitter active area.

A photodetector including a high electron mobility transistor (HEMT) device or an indium phosphide (InP)-based heterojunction bipolar transistor (HBT) device including a collector layer, a base layer formed on the collector layer and an emitter layer formed on the base layer. The photodetector also includes a nanowire array electrically coupled to the HEMT device or the base layer of the HBT device, and may include a first sub-array positioned on one side of the emitter layer and second sub-array positioned on an opposite side of the emitter layer. The nanowire array includes a plurality of spaced apart and conical-shaped InP nanowires encased in a transparent medium, and are operable to absorb light over a wavelength band of 400-925 nm and convert the light to an electrical signal that is received by the HEMT or HBT device.