A bonding layer 3 is formed over a piezoelectric material substrate, and the bonding layer is made of one or more materials selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. A neutralized beam is irradiated onto a surface of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

The present invention provides a method for electrohydrodynamic jet printing curved piezoelectric ceramics. First, a stable pressure is provided for a piezoelectric ceramic slurry to ensure that the slurry flows out from a nozzle at a fixed flow rate, and at the same time, an electric field is applied to the piezoelectric ceramic slurry at the nozzle to form a stable fine jet; then a curved substrate is fixed on a fixture of a curved substrate six-axis linkage module to ensure that the curved substrate is always perpendicular to the jet of the nozzle and keeps a constant distance from the nozzle during a printing process; fine jet drop on demand is realized through cooperative control of the changes of the curved substrate six-axis linkage module, the electric field and a flow field, and electrohydrodynamic jet printing and molding of curved piezoelectric ceramics is finally realized.

A subtractive forming method for piezoresistive material stacks includes applying an etch chemistry to an exposed first portion of a piezoresistive material stack. The etch chemistry includes a citric acid component for removing a first element of a piezoelectric layer of the piezoresistive material stack selectively to a surface oxide. At least one second element of the piezoelectric layer remains. The method further includes heating the piezoresistive material stack after said applying the etch chemistry to vaporize the at least one second element. A second portion of the piezoresistive material stack is protected from the removal and the heating by a mask.

The present invention provides a method for electrohydrodynamic jet printing curved piezoelectric ceramics. First, a stable pressure is provided for a piezoelectric ceramic slurry to ensure that the slurry flows out from a nozzle at a fixed flow rate, and at the same time, an electric field is applied to the piezoelectric ceramic slurry at the nozzle to form a stable fine jet; then a curved substrate is fixed on a fixture of a curved substrate six-axis linkage module to ensure that the curved substrate is always perpendicular to the jet of the nozzle and keeps a constant distance from the nozzle during a printing process; fine jet drop on demand is realized through cooperative control of the changes of the curved substrate six-axis linkage module, the electric field and a flow field, and electrohydrodynamic jet printing and molding of curved piezoelectric ceramics is finally realized.

Provided is a nano-scale single crystal thin film. The nano-scale single crystal thin film comprises a nano-scale single crystal thin film layer, a first transition layer, an isolation layer, a second transition layer, and a substrate layer. The first transition layer is located between the nano-scale single crystal thin film layer and the isolation layer, while the second transition layer is located between the isolation layer and the substrate layer. The first transition layer comprises a certain concentration of the H element.

Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.

A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.

A method for manufacturing a piezoelectric device that includes a substrate, a piezoelectric layer directly or indirectly supported by the substrate and arranged above the substrate, a heater, and a heater electrode for driving the heater. Moreover, the method includes forming the piezoelectric layer, the heater, and the heater electrode and subjecting the piezoelectric device to heat treatment with heat generated from the heater by driving the heater by feeding electric power to the heater electrode.

Provided is a composite substrate for a surface acoustic wave device in which a chip is hardly generated at an outer peripheral edge of an electric material layer and peeling is hardly generated from the outer peripheral edge. The composite substrate for a surface acoustic wave device is a composite substrate in which a piezoelectric material single crystal thin film and a supporting substrate are bonded at a bonding surface. The supporting substrate has a closed first contour line, the bonding surface has a closed second contour line, and the piezoelectric material single crystal thin film has a closed third contour line. When the first contour line and the third contour line are projected perpendicularly to a plane including the bonding surface, the projection image of the first contour line is located outside the second contour line, and the projection image of the third contour line is located inside the second contour line.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.