A communication device for receiving an interrogation signal at a first carrier frequency and for transmitting a response signal at a second carrier frequency is disclosed. The interrogation signal comprises the first carrier frequency modulated at the second carrier frequency. The communication device includes a sensor coupled to a demodulator. The sensor receives a low frequency input used to further modulate the interrogation signal. The demodulator demodulates the low frequency input from the first carrier frequency to thereby generate the response signal comprising the second carrier frequency and the low frequency input. The demodulator preferably includes a pyroelectric demodulator, a piezoelectric demodulator, or a detector diode. The demodulator preferably has a frequency response less than the first carrier frequency but greater than the second carrier frequency.

A bonding layer 3 is formed over a piezoelectric material substrate, and the bonding layer 3 is made of or more material selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. Neutralized beam A is irradiated onto a surface 4 of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

A transceiver device for receiving an interrogation signal at a first carrier frequency and for transmitting a response signal at a second carrier frequency is disclosed. The interrogation signal comprises the first carrier frequency modulated at the second carrier frequency. The communication device includes a sensor coupled to a demodulator. The sensor receives a low frequency input used to further modulate the interrogation signal. The demodulator demodulates the low frequency input from the first carrier frequency to thereby generate the response signal comprising the second carrier frequency and the low frequency input. The demodulator preferably includes a pyroelectric demodulator, a piezoelectric demodulator, or a detector diode. The demodulator preferably has a frequency response less than the first carrier frequency but greater than the second carrier frequency.

A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO.sub.3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the seed layer from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition ABO.sub.3 on piezoelectric material ABO.sub.3 of the seed layer where A consists of a least one of the following elements Li, Na, K, H; B consists of a least one of the following elements Nb, Ta, Sb, V; and A is different from A or B is different from B.

A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

A polarizing apparatus includes an electromagnetic wave irradiator to irradiate a target film with an electromagnetic wave to heat the target film; and an electric charge generator to apply an electric field to the target film.

To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO.sub.3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb.sup.2+ as A-site ions and containing Zr.sup.4+ and Ti.sup.4+ as B-site ions, and the A-site contains Bi.sup.3+ as A-site compensation ions and the B-site contains Nb.sup.5+ as B-site compensation ions.

The present invention provides oxide particles having a compositional formula of Pb(Zr.sub.xTi.sub.1-x)O.sub.3, wherein x is 0.46?x?0.6; wherein a size of the particle is from 0.5 to 10 ?m; a porosity of a surface of the particle is 20% or less; and a shape of the particle is any one of a cube, a rectangular parallelepiped, or a truncated octahedron.

A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.

To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO.sub.3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb.sup.2+ as A-site ions and containing Zr.sup.4+ and Ti.sup.4+ as B-site ions, and the A-site contains Bi.sup.3+ as A-site compensation ions and the B-site contains Nb.sup.5+ as B-site compensation ions.