The manufacturing method of a solar cell includes forming a photoelectric conversion unit and forming an electrode connected to the photoelectric conversion unit. The step of forming the electrode includes forming a seed formation layer connected to the photoelectric conversion unit, forming an anti-oxidation layer on the seed formation layer, performing a thermal process such that a material of the seed formation layer and a material of the photoelectric conversion unit react with each other to form a chemical bonding layer at a portion at which the seed formation layer and the photoelectric conversion unit are adjacent to each other, forming a conductive layer and a capping layer on the seed formation layer in a state in which a mask is used on the seed formation layer, and patterning the seed formation layer using either the conductive layer or the capping layer as a mask.

A versatile silicone resin reflective substrate which exhibits high reflectance of high luminance light from an LED light source over a wide wavelength from short wavelengths of approximately 340-500 nm, which include wavelengths from 380-400 nm near lower limit of the visible region, to longer wavelength in the infra-red region. The silicone resin reflective substrate has a reflective layer which contains a white inorganic filler powder dispersed in a three-dimensional cross linked silicone resin, the inorganic filler powder having a high reflective index than the silicone resin. The reflective layer is formed on a support body as a film, a solid, or a sheet. The silicone resin reflective substrate can be easily formed as a wiring substrate, a packaging case or the like, and can be manufactured at low cost and a high rate of production.

In accordance with embodiments disclosed herein, there are provided methods and systems for implementing damage-and-resist-free laser patterning of dielectric films on textured silicon. For example, in one embodiment, such means include means for depositing a Silicon nitride (SiNx) or SiOx (silicon oxide) layer onto a crystalline silicon (c-Si) substrate by a Plasma Enhanced Chemical Vapor Deposition (PECVD) processing; depositing an amorphous silicon (a-Si) film on top of the SiNx or SiOx layer; patterning the a-Si film to define an etch mask for the SiNx or SiOx layer; removing the SiNx or SiOx layer via a Buffered Oxide Etch (BOE) chemical etch to expose the c-Si surface; removing the a-Si mask with a hydrogen plasma etch in a PECVD tool to prevent current loss from the mask; and plating the exposed c-Si surface with metal contacts. Other related embodiments are disclosed.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized to ablate, transfer material, and/or laser-dope or laser fire contacts. Laser ablation can be utilized to remove and pattern openings in a passivated or emitter layer. Laser transferring may then be utilized to transfer dopant and/or contact materials to the patterned openings, thereby forming an interdigitated finger pattern. The laser processing system may also be utilized to plate a conductive material on top of the transferred dopant or contact materials.

The solar cell (1) of the present invention is provided with an n-side electrode (14), a p-side electrode (15), and a photoelectric conversion unit (20) having a first main surface (20a) and a second main surface (20b). The first main surface (20a) includes an n-type surface (20an) and a p-type surface (20ap). The photoelectric conversion unit (20) has a semiconductor substrate (10) and a semiconductor layer (12n). The semiconductor substrate (10) has first and second main surfaces (10b, 10a). The semiconductor layer (12n) is arranged on a portion of the first main surface (10b). The semiconductor layer (12n) constitutes either the n-type surface (20an) or the p-type surface (20ap). The semiconductor layer (12n) includes a relatively thick portion (12n1) and a relative thin portion (12n2). The n-side electrode (14) or the p-side electrode (15) is arranged on at least the relatively thin portion (12n2) of the semiconductor layer (12n). The solar cell of the present invention, by means of the aforementioned configuration, is able to extend the lifetime of the minor carriers by means of the relatively thick portion (12n1), to maintain low resistance between the semiconductor substrate (10) and the n-side electrode (14) by means of the relatively thin portion (12n2), and to increase hole and electron collection efficiency.

Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Base regions, emitter regions, and front surface field regions are formed through ion implantation and annealing processes.

A solar cell module is discussed. The solar cell module includes a plurality of solar cells each including a semiconductor substrate and a plurality of first electrodes and a plurality of second electrodes, which are formed on a back surface of the semiconductor substrate and are separated from each other, the plurality of solar cells disposed in a first direction; a plurality of first conductive lines connected to the plurality of first electrodes included in a first solar cell of the plurality of solar cells, and the plurality of first conductive lines extended in the first direction; a plurality of second conductive lines connected to the plurality of second electrodes included in a second solar cell of the plurality of solar cells which is adjacent to the first solar cell, and the plurality of second conductive lines extended in the first direction.

A solar module and a method for fabricating a solar module comprising a plurality of rear contact solar cells are described. Rear contact solar cells (1) are provided with a large size of e.g. 156156 mm.sup.2. Soldering pad arrangements (13, 15) applied on emitter contacts (5) and base contacts (7) are provided with one or more soldering pads (9, 11) arranged linearly. The soldering pad arrangements (13, 15) are arranged asymmetrically with respect to a longitudinal axis (17). Each solar cell (1) is then separated into first and second cell portions (19, 21) along a line (23) perpendicular to the longitudinal axis (17). Due to such cell separation and the asymmetrical design of the soldering pad arrangements (13, 15), the first and second cell portions (19, 21) may then be arranged alternately along a line with each second cell portion (21) arranged in a 180-orientation with respect to the first cell portions (19) and such that emitter soldering pad arrangements (13) of a first cell portion (19) are aligned with base soldering pad arrangements (15) of neighboring second cell portions (21), and vice versa. Simple linear ribbon-type connector strips (25) may be used for interconnecting the cell portions (19, 21) by soldering onto the underlying aligned emitter and base soldering pad arrangements (13, 15). The interconnection approach enables using standard ribbon-type connector strips (25) while reducing any bow as well as reducing series resistance losses.