The present invention discloses a different option electronic devices with their structure so layers that include doping, function, ohmic, conductive, planarization and passivation layer. The invention also discloses configuration of connections of top and bottom sides comprising isolated structures, related electrodes and height configuration of isolated structures.

A passivation method for a passage opening of a wafer, at least having the steps of: providing a wafer having a top, a bottom and comprising a plurality of solar cell stacks, wherein each solar cell stack has a Ge substrate that forms the bottom of the wafer, a Ge sub-cell, at least two III-V sub-cells, in the named order, and at least one passage opening extending from the top to the bottom of the wafer, with a contiguous side wall and a circumference that is oval in cross section, and applying a dielectric insulating layer by means of chemical vapor deposition to the top of the wafer, the bottom of the wafer and the side wall of the passage opening.