A method of manufacturing surface acoustic wave device chips includes grinding a reverse side of a wafer with a surface acoustic wave device formed in each area demarcated by a plurality of crossing projected dicing lines on a face side of the wafer; before or after grinding, applying a laser beam to the reverse side of the wafer such that the laser beam is focused at a position within the wafer, the position being closer to the face side of the wafer than a position corresponding to a reverse side of each of the surface acoustic wave device chips to be produced from the wafer, thereby forming a modified layer for diffusing an acoustic wave; and after grinding and applying the laser beam, dividing the wafer along the projected dicing lines into a plurality of the surface acoustic wave device chips.

A magnetoelectric energy harvester having excellent power generation performance and a manufacturing method thereof are provided. The magnetoelectric energy harvester includes a magnetostrictive material portion including a magnetostrictive material which generates a mechanical deformation when being magnetized. The magnetoelectric energy harvester also includes a piezoelectric material portion which has a bending vibration mode and includes a piezoelectric material which produces power by receiving a mechanical deformation force from the magnetostrictive material portion.

A piezoelectric vibration device that includes a piezoelectric vibrator having excitation electrodes formed thereon; a base having the piezoelectric vibrator on a first surface thereof; outer electrodes formed to continuously extend from the first surface of the base through a side face of the base to a second surface of the base opposite the first surface; and a lid having a recess opening that faces the first surface of the base, the lid being joined to the base to hermetically seal the piezoelectric vibrator in an internal space defined by the recess and the base. An edge portion of a corresponding one of the outer electrodes, formed by the first surface and the side face of the base, is at least partly covered by a covering member having insulating properties.

An actuator device (AV) including a main body (10) with a base body (10a) and a buildup body (10b) a plurality of actuators which are formed of actuator bodies comprising a piezoelectric or electrostrictive material and actuation electrodes and a printed circuit board (100) which extends in the longitudinal direction (X) of the actuator device (AV) over at least sections of actuator connection coatings, wherein conductive paths thereof are in electrical contact with the actuator connection coatings and wherein in the connection area segment (S0b, S1b, S2b, S3b) of the respective recess (S0, S1, S2, S3) at least in sections a connection layer (V) made of a resin reinforcement material with bismaleimide is disposed such that the connection layer (V) at least in sections contacts side surfaces (AS1, AS2) which respectively delimit a connection area segment (S0b, S1b, S2b, S3b) and which are opposed to each other.

Techniques and structures are provided for manufacturing a flexible PMUT array. In one embodiment, a piezoelectric micromechanical ultrasonic transducer (PMUTs) array comprises a plurality of PMUTs, where each PMUT in the flexible array of PMUTs includes: a first polymer layer configured to support the PMUT, a mechanical layer configured to provide planarization to the PMUT, a first electrode, a second electrode, a piezoelectric layer configured to separate the first electrode and the second electrode, patterns on the first electrode, the piezoelectric material, and the second electrode configured to route electrical signals, and a cavity configured to adjust a frequency response of the PMUT.

In some embodiments, in response to the user selecting a first node in the tree to be pinned, the system displays a first detail panel for the first node, wherein the first detail panel displays state information for the first node, wherein the state information is frozen at the time of pinning. Moreover, in response to the user selecting a second node in the tree to be pinned, the system displays a second detail panel for the second node, wherein the second detail panel displays state information for the second node, wherein the state information is frozen at the time of pinning. Note that the first detail panel is displayed concurrently with the second detail panel to facilitate comparing state information between the first and second nodes.

In some examples, techniques are provided for quick haptic feedback, without the use of a controller, which is local to individual, non-actuating keys, such as keys of a thin keyboard or keypad. The haptic feedback may be in the form of a simulated key-click feedback for an individual key that is pressed by a user such that the finger used to press the key feels the tactile sensation. The haptic feedback mimics the tactile sensation of a mechanical key (e.g., buckling spring, pop-dome key switch) to give a user the perception that they have actuated a mechanically movable key.

A device, such as a MEMS device, with stress tuning to achieve a desired stack stress across the wafer. The stress tuning includes trimming a stress compensation layer over a target layer having different stresses in different target layer regions. The trimming may include ion beam trimming to produce a stress compensation layer having different thicknesses over the different target layer regions to balance the stress of the target layer to a desired stress. The desired stress may result in almost zero residual stress to produce an almost flat MEMS device.

An optical scanning device includes a mirror and a drive beam. The drive beam includes a piezoelectric portion. The piezoelectric portion is partitioned by a plurality of first grooves into a plurality of piezoelectric bodies. The piezoelectric bodies are reduced in length in an X-axis direction as the piezoelectric bodies approach one end side connected to an anchor. The piezoelectric bodies are reduced in length in the X-axis direction as the piezoelectric bodies approach the other end side connected to a link beam.

It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.