The present invention concerns a water-processable n-type semiconductor comprised of polyvinylpyrrolidone (PVP), carbon nanotubes (CNTs) and poly(ethyleneimine) (PEI). The semiconductors are prepared by providing PVP and CNTs in a hydrophilic slurry and dispersing therein small amounts of PEI.

A PEDOT:PSS film having enhanced thermoelectric properties is doped with DMSO and a binary secondary dopant, such as PEO. The composition of such film causes the ratios of PEDOT in bipolaron states to be increased. As a result, the Seebeck coefficient, the electrical conductivities, and power factor of the film are increased, thereby increasing the efficiency of the film. Thus, a thermoelectric device that uses the film is able to achieve enhanced operating performance.

Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

Provided are an organic electroluminescence device having high current efficiency and a long lifetime, and a biscarbazole derivative for realizing the device. The biscarbazole derivative has a specific substituent. The organic EL device has a plurality of organic thin-film layers including a light emitting layer between a cathode and an anode, and at least one layer of the organic thin-film layers contains the biscarbazole derivative.

Disclosed is a display device that may include a pixel electrode formed on source and drain electrodes, the pixel electrode electrically connected with the drain electrode, and a first protection electrode formed on a second metal pattern, the first protection electrode electrically connected with the second metal pattern and at least partially covering the second metal pattern; and a connection electrode formed on a passivation film, the connection electrode connected with a first metal pattern through a first contact hole, and connected with the first protection electrode through a second contact hole, wherein the first protection electrode is formed of the same material as that of the pixel electrode.

A method of producing a shaped product for a thermoelectric conversion element is provided. The method comprises: mixing a coarse mixture that contains metal nanoparticle-supporting carbon nanotubes, a resin component, and a solvent by dispersion treatment that brings about a cavitation effect or a crushing effect, to obtain a composition for a thermoelectric conversion element; and removing the solvent from the composition for a thermoelectric conversion element.

A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.

The present invention provides thermoelectric conversion elements and thermoelectric conversion modules which are possible to effectively use oxide materials having high Seebeck coefficient, and excellently improve their outputs. The present invention provides thermoelectric conversion elements which comprise at least a charge transport layer, thermoelectric conversion material layers and electrodes, wherein the charge transport layer comprises a graphite treated to dope charge-donating materials so that the graphite has an n-type semiconductor property, or a graphite treated to dope charge-accepting materials so that the graphite has a p-type semiconductor property, and provides thermoelectric conversion modules using the thermoelectric conversion elements.

The method for producing an electrically conductive polymer material includes: a preparing step of providing a polymer film formed from an oriented polymeric semiconductor; and a doping step of introducing a first ion into the polymer film, in the doping step, a treatment liquid, which is obtained by dissolving, in an ionic liquid including the first ion having the opposite polarity to carriers to be injected into the polymeric semiconductor by doping in the form of a cation and an anion or an organic solvent having dissolved therein a salt including the first ion, a dopant which has the same polarity as that of the first ion and which oxidizes or reduces the polymeric semiconductor, is allowed to be in contact with the surface of the polymer film to form an intermediate of a second ion formed by ionization of the dopant and the polymeric semiconductor by a redox reaction, and to replace the second ion in the intermediate with the first ion.

Thermoelectric module (200, 300) comprising: a substrate (201); a first material (205) of a first doping type forming a first leg extending on a surface of the substrate (201), the first leg comprising a first end oriented towards a first region of the surface and a second, opposite end oriented towards a second region of the surface; and a second material (203) of a second doping type forming a second leg extending on the surface of the substrate (201), the second leg comprising a first end oriented towards the first region of the surface and a second, opposite end oriented towards the second region of the surface, such that the first and second legs are substantially parallel to each other, wherein the first end of the first leg is in electrical connection with the first end of the second leg, and wherein the first and second doping types have opposite polarity, such that when a heat flux (209) is applied between the first region and the second region of the surface, a potential difference arises between the second end of the first leg and the second end of the second leg, and wherein the substrate (201), the first material (205), and the second material (203) are substantially transparent to visible light.