A semiconductor device includes a semiconductor substrate, a polysilicon layer fixed to the semiconductor substrate, and a silicon nitride layer in contact with the polysilicon layer, wherein the polysilicon layer includes an n-type layer and a p-type layer in contact with the n-type layer; a semiconductor device manufacturing method includes forming the polysilicon layer covering at least one hydrogen-containing layer, and heating the polysilicon layer and the hydrogen-containing layer.

Aspects relate to an energy harvesting device adapted for use by an athlete while exercising. The device may utilize a mass of phase-change material to store heat energy, the stored heat energy subsequently converted into electrical energy by one or more thermoelectric generator modules. The energy harvesting device may be integrated into an item of clothing, and such that the mass of phase change material may store heat energy as the item of clothing is laundered.

Disclosed is a thermoelectric device in which a separate interlayer is inserted between a thermoelectric leg and an electrode to reduce the contact resistance between the thermoelectric leg and the electrode, so that the interlayer serves as a tunneling path between the thermoelectric leg and the electrode, facilitating the charge movements between the two materials. The thermoelectric device according to an embodiment includes a substrate; at least one thermoelectric leg positioned on the substrate; an interlayer positioned on each thermoelectric leg of the at least one thermoelectric leg and including a plurality of interlayer materials that are chemically bonded with a respective thermoelectric leg; and an electrode positioned on each interlayer and electrically connected to the respective thermoelectric leg, wherein the plurality of interlayer materials of each respective interlayer is arranged in a shape of a brush.

A system and method to control a thermoelectric device using a microcontroller is provided. The system and method include a temperature sensor operatively coupled to a microcontroller that has a central processing unit, at least one memory device, and a module for generating at least one pulse width modulation signal. The at least one pulse width modulation signal generated by the microcontroller has “ON” and “OFF” states to drive the thermoelectric device.

Thermoelectric apparatus comprising a thermoelectric generator (101), a thermally conductive heat spreader (105) and a thermally conductive heat transfer element (103). In use, the TEG is disposed on a surface of a heated object (10), e.g. a boiler, pipe or electrical equipment. Heat is drawn away from the cold side of the TEG by the thermally conductive heat transfer element. Thermal insulation (107, 109) may be provided between the TEG and the thermally conductive heat spreader and/or over the heat spreader. The apparatus may be provided in kit form for assembly on a surface which is heated when in use.

A thermal transpiration device and method of making the same. The device includes a pair of membranes having predetermined thicknesses in order to provide the device with strength and rigidity. The thickness of a portion of each membrane is reduced in the area where thermal transpiration occurs in order to optimize the effectiveness of the thermal transpiration device without scarifying structural integrity of the device.

Some embodiments include apparatus and methods for using a switch to couple an inductor to an energy harvester for a time interval to allow charging of the inductor during the time interval, and using a circuit to generate control information for power management. A value of the control information is based on a value of the time interval.

A device for manipulating the temperature of a surface may include a heat transfer surface including active portions and a passive portion. The passive portion may include an inner passive portion disposed between each of the active portions and/or may include an outer passive portion that may surround each of the active portions. The active portions may form 40-90% of a total surface area of the heat transfer surface, where total surface area includes active portions and an inner passive portion. The passive portion(s) may have a thermal conductivity less than the active portion. A processor may be in electrical communication with thermoelectric modules defining or forming the active portions to generate a heat flux through the heat transfer surface. The heat flux through the active portions may be between 500 and 15,000 W/m.sup.2 during nominal operation of the device.

An imager pixel comprising a micro-platform supported by phononic nanowires, the nanowires providing an extreme-level of thermal isolation from a surrounding substrate. The micro-platform in embodiments comprises thermal sensors sensitive to heat from absorbed incident longwave/shortwave photonic irradiation. In embodiments, the pixel photonic sensing structure comprises both a thermal sensor together with a separate photodiode/phototransistor/photogate for sensing RGB and NIR wavelengths. Some embodiments comprise a micro-platform with an integral Peltier thermoelectric element permitting in situ refrigeration to cryogenic temperatures.

A method may be provided of manufacturing a thermoelectric leg. The method may include preparing a first metal substrate including a first metal, and forming a first plated layer including a second metal on the first metal substrate. The method may also include disposing a layer including tellurium (Te) on the first plated layer, and forming a portion of the first plated layer as a first bonding layer by reacting the second metal and the Te. The method also includes disposing a thermoelectric material layer including bismuth (Bi) and Te on an upper surface of the first bonding layer, and disposing a second metal substrate, on which a second bonding layer and a second plated layer are formed, on the thermoelectric material layer, and sintering.