Systems, apparatuses, and methods for placing cells in an integrated circuit are described. In various embodiments, an integrated circuit is divided into many partitions. In a first set of partitions susceptible to transistor latch-up, the many transistor gate stripes are connected to one of the power rails rather than left floating. The lengths of the transistor gate stripes are shortened for well tap cells in the first partition, but increased in a second partition susceptible for poor signal integrity. One or more implant layers are formed underneath the transistor gate stripes in each of the first and second partitions to adjust an amount of protection against transistor latch-up and poor signal integrity. An electrostatic discharge transistor is included with at least one source region of multiple source regions formed in a well with a same doping polarity as the at least one source region.

Embodiments of the present disclosure provide a display panel and a display device, the display panel includes: a base substrate; a plurality of light emitting devices on the base substrate; an encapsulation layer covering the light emitting devices; a mirror layer located on a side of the encapsulation layer away from the base substrate, the mirror layer including a plurality of first openings, and an orthographic projection of each first opening on the base substrate overlapping an orthographic projection of at least one light emitting device on the base substrate; a transparent filling layer located on a side of the encapsulation layer away from the base substrate, at least part of the transparent filling layer being located in the first openings.

According to one embodiment, a semiconductor device includes first to fourth electrodes, a main element region, a fifth semiconductor region, a sense element region, an eighth semiconductor region, and a ninth semiconductor region. The main element region includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, and a first gate electrode. The sense element region includes the first semiconductor region, the second semiconductor region, a sixth semiconductor region, a seventh semiconductor region, and a second gate electrode. An area of the sense element region in the first plane is smaller than an area of the main element region in the first plane. The eighth semiconductor region is provided around the sense element region. The ninth semiconductor region is provided between the main element region and the sense element region, and electrically connected to the eighth semiconductor region.

Semiconductor devices with insulation features and methods of fabrication are provided. A method includes forming a first source/drain feature and a second source/drain feature over a substrate, wherein the first source/drain feature and the second source/drain feature are separated by a gate structure; removing the gate structure to form a trench; forming an insulation feature in the trench; and forming a functional circuit over the substrate, wherein a shunt path parallel to the functional circuit is defined under the insulation feature and between the first source/drain feature and the second source/drain feature.

A circuit device includes core circuitry. The circuit device further includes a first plurality of guard rings having a first dopant type, wherein the first plurality of guard rings is around a periphery of the core circuitry. The circuit device further includes a second plurality of guard rings having a second dopant type, wherein the second dopant type is opposite to the first dopant type, and at least one guard ring of the second plurality of guard rings is around a periphery of at least one guard ring of the first plurality of guard rings. Guard rings of the first plurality of guard rings are in a concentric arrangement.

A power semiconductor device includes a high voltage unit configured to output a high voltage, a low voltage unit configured to output a low voltage, a capacitor electrically connected to the high voltage unit and supplying power to the high voltage unit while the high voltage is output, a switching unit electrically connected to the high voltage unit and the capacitor and configured to connect the capacitor to a driving power source to charge the capacitor while the low voltage is output and to prevent the high voltage unit from being electrically connected to the driving power source while the high voltage is output, and a resistance unit electrically connected between the switching unit and the high voltage unit and configured to drop the high voltage to a voltage lower than a breakdown voltage of the switching unit while the high voltage is output.

A semiconductor device includes a substrate, a first transistor, a second transistor and a third transistor. The substrate includes a high-voltage (HV) area, a medium-voltage (MV) area, and a low-voltage (LV) area. The first transistor is disposed in the HV area and includes a first gate dielectric layer and a first gate electrode. The second transistor is disposed in the LV area and includes a plurality of fin-shaped structures and a second gate electrode. The third transistor is disposed in the MV area and includes a third gate dielectric layer and a third gate electrode. The topmost surfaces of the first gate electrode, the second gate electrode and the third gate electrode are coplanar with each other.