A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

The present invention is related to solid state light emitting diodes (LEDs), photodetector/photovoltaic devices, displays, applications and methods for making the same. As demonstrated experimentally, the LEDs, as disclosed herein, have high light emission efficiency, high contrast, high brightness, low ambient light reflection, low light glare, and a tunable display viewing angle. The same LED disclosed here can be used as high efficiency displays and high efficiency photovoltaic device or photodetectors. This means that the same device, where used in array form, can be used as the display (LED operation mode) and power supply (photovoltaic device mode) and camera (photodetector and imaging mode).

A method (100) is provided for forming resonant cavity light emitting elements. The method comprises a step (101) of forming a first structure comprising a first substrate, a stop layer, a light emitting epitaxial structure, a conductive oxide layer, and second a substrate dielectrically bonded to the conductive oxide layer. The method further comprises a step (102) of etching from the first substrate up to the stop layer. Additionally, the method comprises a step (103) of forming a plurality of light emitting mesa modules, each having a metal layer deposited on the stop layer. Furthermore, the method comprises a step (104) of hybrid bonding the first structure to a carrier substrate to form a second structure. Furthermore, the method comprises a step (105) of etching from the second substrate up to the conductive oxide layer. Moreover, the method comprises a step (106) of depositing a distributed Bragg reflector on top of the conductive oxide layer, thereby forming the resonant cavity light emitting elements.

In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.

A light-emitting element includes a first reflection layer, a second reflection layer, a multi-layer light-emitting structure, and a light-transmitting semiconductor layer. The first reflection layer has a first reflectance, and the second reflection layer has a second reflectance greater than the first reflectance. The multi-layer light-emitting structure is between the first reflection layer and the second reflection layer. The light-transmitting semiconductor layer is located on the first reflection layer and has an upper light-extracting surface, and the first reflection layer is closer to the upper light-extracting surface than the second reflection layer. An interval between the upper light-extracting surface and the first reflection layer is equal to or smaller than 5 m.

This application relates to display panels and electronic devices. An example display panel includes a display area, and the display area includes a driver substrate, a pixel structure, a first reflection layer, a first reflection grating, and a second reflection layer. The driver substrate, the first reflection layer, and the pixel structure are sequentially disposed. The driver substrate is configured to enable the pixel structure to emit light, and the second reflection layer is connected to a side surface of the pixel structure. The first reflection grating and the first reflection layer form a resonant cavity, and the resonant cavity is configured to enable light with a specific wavelength emitted by the pixel structure to resonate.

Methods for manufacturing a light emitting diode (LED) structure. One exemplary method includes forming a first reflector layer and a semiconductor structure on a first substrate, performing an implantation operation to form an isolation material surrounding at least one optical cavity unit in the semiconductor structure, forming a passivation layer on the semiconductor structure, forming an electrode layer on the passivation layer, and forming a second reflector layer on the passivation layer and the electrode layer.

A layered structure comprising a substrate having a first deformation. Also one or more device layers forming a device and having a second deformation. A deformation control layer which is pseudomorphic with respect to the substrate and having a third deformation. The deformation control layer is selected such that a sum of the first, second and third deformations matches a target level of deformation. Advantageously the layered structure has a controlled, known deformation which can be compressive, tensile or zero.

A photon source comprising: a quantum dot; and an optical cavity, the optical cavity comprising: a diffractive Bragg grating DBG; and a planar reflection layer, the DBG comprising a plurality of concentric reflective rings surrounding a central disk and at least one conductive track extending from the central disk across the plurality of concentric rings, the quantum dot being provided within the central disk and the planar reflection layer being provided on one side of the DBG to cause light to be preferentially emitted from the opposing side of the DBG.

A light-emitting element includes a first reflection layer having a first reflectance; a second reflection layer having a second reflectance greater than the first reflectance; a first opening in the second reflection layer; a multi-layer light-emitting structure disposed between the first reflection layer and the second reflection layer; a light-transmitting semiconductor layer disposed on the first reflection layer and having an upper light-extracting surface, wherein the first reflection layer is closer to the upper light-extracting surface than the second reflection layer; and a first conductive pad disposed in the first opening, electrically connected to the multi-layer light-emitting structure; wherein the first reflection layer includes a Bragg reflector containing semiconductor material.