A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P- and NSi beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

A method of fabricating four junction solar cell wherein the selection of the composition of the subcells and their band gaps maximizes the efficiency at high temperature (in the range of 50 to 100 degrees Centigrade) in deployment in space at a specific predetermined time after initial deployment (referred to as the beginning of life or BOL), such predetermined time being referred to as the end-of-life (EOL), and being at least five years after the BOL, such selection being designed not to maximize the efficiency at BOL but to increase the solar cell efficiency at the EOL while disregarding the solar cell efficiency achieved at the BOL, such that the solar cell efficiency designed at the BOL is less than the solar cell efficiency at the BOL that would be achieved if the selection were designed to maximize the solar cell efficiency at the BOL.

A prism coupled waveguide-fed solar collector array optimized for geometric fill factor. An integrated linear array of prisms is arranged with their input faces in a common plane. The exit faces of the prisms each feds a corresponding optical waveguide and detector.

An integrated thin-film lateral multi-junction solar device and fabrication method are provided. The device includes, for instance, a substrate, and a plurality of stacks extending vertically from the substrate. Each stack may include layers, and be electrically isolated against another stack. Each stack may also include an energy storage device above the substrate, a solar cell above the energy storage device, a transparent medium above the solar cell, and a micro-optic layer of spectrally dispersive and concentrating optical devices above the transparent medium. Furthermore, the device may include a first power converter connected between the energy storage device and a power bus, and a second power converter connected between the solar cell and the power bus. Further, different solar cells of different stacks may have different absorption characteristics.

The present invention provides a photoelectric conversion device. Specifically, the photoelectric conversion device has a structure in which a substrate including a photoelectric conversion element provided at the bottom and a substrate including a photoelectric conversion element provided at the side are secured in a brace form by a light-dividing device. This structure divides incident light using the light-dividing device into a plurality of wavelength bands, and causes the divided light to fall onto the photoelectric conversion elements provided at the bottom and side, thereby making it possible to provide a photoelectric conversion device which is capable of generating a lame amount of electric power. In addition, the light-dividing device distributes pressures and impacts applied to the substrates at the bottom and side, thus making it possible to provide a photoelectric conversion device which has resistance to pressures and impacts.

A rectifier comprising a metal-insulator-metal (MIM) structure. The insulator may be a native oxide with an adjacent layer of graphene. In one implementation, the rectifier is used in an electromagnetic energy collector consisting of a planar waveguide formed of multiple material layers having at least two different dielectric constants. MIM rectifiers are aligned with mirrors are formed within the waveguide core. In some arrangements, a plurality of MIM rectifiers are disposed in a column or 3D array beneath each mirror.

An optical device with photon flipping for converting an incident light flux into a practically monochromatic light beam, the device including a cladding area including a photon crystal microstructure, the photon crystal microstructure having an allowed spectral band and a spectral band gap; a flipping area including a flipping fluorescent dye which has a spectral band for absorbing fluorescence, which covers at least part of the allowed spectral band, and a spectral band for emitting fluorescence, which covers at least part of the spectral band gap of the photon crystal microstructure; a central area arranged to enable propagation of a monochromatic light beam having a wavelength in the spectral band gap, the central area being surrounded by the photon crystal microstructure; the core area having a thickness which is less than or equal to five times the wavelength of the maximum fluorescence emission of the flipping fluorescent dye.

Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

Disclosed are a diffractive optical element, a design method thereof and the application thereof in a solar cell. The design method for a design modulation thickness of a sampling point of the diffractive optical element comprises: calculating the modulation thickness of the current sampling point for each wavelength component; obtaining a series of alternative modulation thicknesses which are mutually equivalent for each modulation thickness, wherein a difference between the corresponding modulation phases is an integral multiple of 2; and selecting one modulation thickness from the alternative modulation thicknesses of each wavelength to determine the design modulation thickness of the current sampling point. In an embodiment, the design method introduces a thickness optimization algorithm into a Yang-Gu algorithm. The design method breaks through limitations to the modulation thicknesses/modulation phases in the prior art and increases the diffraction efficiency, and the obtained diffractive optical element facilitates mass production by a modern photolithographic technique, which greatly reduces the cost. The diffractive optical element may also be applied to the solar cell, which provides an efficient and low-cost way for solar energy utilization.

A light splitting optical module that converts incident light into electrical energy, the module including a solid optical element comprising an input end for receiving light, a first side, and a second side spaced from the first side, a first solar cell adjacent to the first side of the solid optical element, and a second solar cell adjacent to the second side of the solid optical element. The first solar cell is positioned to absorb a first subset of incident light and reflect a first remainder of the incident light to the second solar cell through the solid optical element, wherein the first solar cell has a lower band gap than the second cell.