Patent classifications
H01L41/253
ULTRASOUND DEVICE WITH PIEZOELECTRIC MICROMACHINED ULTRASONIC TRANSDUCERS
Ultrasound devices including piezoelectric micromachined ultrasonic transducers (PMUTs) are described. Frequency tunable PMUT arrays are provided. The PMUTs may be formed on the same substrate or a different substrate than an integrated circuit substrate. The PMUTs may be formed in a variety of ways and from various suitable piezoelectric materials.
METHOD FOR PRODUCING A LAYER
A method for producing a layer of composition AABO.sub.3, where A is composed of at least one element selected from: Li, Na, K, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag and Tl, and B is composed of at least one element selected from: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn Zr and Tl, wherein the method comprises the steps of: providing a donor substrate of composition ABO.sub.3, forming a layer of composition ABO.sub.3 by thinning the donor substrate, and, before and/or after the thinning step, exposing the ABO.sub.3 layer to a medium containing ions of an element A belonging to the same list of elements as A, A being different from A, such that the ions penetrate into the layer to form a layer of composition AABO.sub.3.
Piezoelectric vibration member and method of manufacturing the same
A piezoelectric vibration member that includes a substrate having a main surface on or in which a piezoelectric vibration member is mounted, a lid having a recess that is open so as to face the main surface and which includes a flange portion that projects outward from an opening edge of the recess, and a bonding layer that bonds the substrate and the lid together so as to hermetically seal the piezoelectric vibrator in a space between the recess and the main surface. The surface roughness of a side surface of the flange portion is greater than the surface roughness of the surface of the recess, and the bonding layer extends from the main surface of the substrate to the side surface of the flange portion.
Method for manufacturing piezoelectric device
In a method of manufacturing a piezoelectric device, during an isolation formation step, a supporting substrate has a piezoelectric thin film formed on its front with a compressive stress film present on its back. The compressive stress film compresses the surface on a piezoelectric single crystal substrate side of the supporting substrate, and the piezoelectric thin film compresses the back of the supporting substrate, which is opposite to the surface on the piezoelectric single crystal substrate side. Thus, the compressive stress produced by the compressive stress film and that produced by the piezoelectric thin film are balanced in the supporting substrate, which causes the supporting substrate to be free of warpage and remain flat. A driving force that induces isolation in the isolation formation step is gasification of the implanted ionized element rather than the compressive stress to the isolation plane produced by the piezoelectric thin film.
ELECTRONIC DEVICE WHICH CAN BE ADHERED TO SKIN AND METHOD FOR MANUFACTURING THE SAME
Exemplary embodiments relate to a skin-adherable electronic device including a semiconductor circuit unit including a circuit element including an electrode and an interconnect, and a semiconductor device including an insulating layer and an active layer; and a flexible patch that can adhere to skin and including a plurality of through-holes, wherein the insulating layer includes a plurality of through-holes corresponding to the plurality of through-holes of the flexible patch, and a method of manufacturing the same. When the active layer is made of a piezoelectric material, the electronic device may be used as a skin sensor that can acquire skin deformation and/or elasticity information.
Method of promoting electric output of piezoelectric/conductive hybrid polymer
A method for promoting an electric output of a piezoelectric/conductive hybrid polymer is provided. The method includes forming a piezoelectric/conductive hybrid polymer by mixing poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) so as to increase an output current and an output power of the piezoelectric/conductive hybrid polymer; and changing a surface structure of the piezoelectric/conductive hybrid polymer by a nano-imprint process for promoting a piezoelectricity of the piezoelectric/conductive hybrid polymer. As a result, an output voltage, the output current and the output power of the piezoelectric/conductive hybrid polymer are increased.
Two-dimensional distributed mode actuator
Methods, systems, and apparatus for using a two-dimensional distributed mode actuator. One of the systems includes a transducer adapted to create a force to cause vibration of a load to generate sound waves, the transducer having a first width along a first axis; a transfer portion connected to the transducer along a first side parallel to the first axis, and having a second width along the first axis that is less than the first width; and a stub connected to the transfer portion along a second side of the transfer portion that is parallel to the first axis and an opposite side from the first side connected to the transducer, having a third width that is greater than the second width, and having a surface adapted to connect to the load to transfer the force received from the transducer through the transfer portion to the load.
Piezo Actuator Fabrication Method
A method of generating a piezoelectric actuator includes: forming a piezoelectric member upon a rigid substrate; and removing one or more portions of the rigid substrate to form one or more gaps in the rigid substrate, thus defining at least one deformable portion of the piezoelectric member and at least one rigid portion of the piezoelectric member
Element and electric generator
An element including: a first electrode; an intermediate layer made of a silicone rubber composition containing a silicone rubber; and a second electrode, where the first electrode, the intermediate layer, and the second electrode are disposed in this order, wherein a peak intensity ratio (10955 cm.sup.1/10255 cm.sup.1) of an infrared absorption spectrum of the intermediate layer varies along a vertical direction relative to a surface of the first electrode, and to a surface of the second electrode.
Elastic wave device, high-frequency front end circuit and communication device
An elastic wave device includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate, a support member that is provided on the piezoelectric substrate so as to surround the IDT electrode, a cover that covers the support member, via electrodes that penetrate through the support member and the cover, and bumps that are bonded to the via electrodes. The IDT electrode is located in a hollow space that is enclosed by the piezoelectric substrate, the support member and the cover. A protruding portion extends along at least a portion of an outer peripheral edge of a surface of the cover that is on the opposite side from the piezoelectric substrate, and the protruding portion extends in a direction away from the piezoelectric substrate.