A method of manufacturing a dielectric device includes epitaxially growing a metal film on a substrate, forming a dielectric film on the metal film such that the dielectric film has a preferentially oriented structure, forming a first electrode film having a non-oriented or amorphous structure on the dielectric film, removing the substrate and the metal film from the dielectric film or removing the substrate from the metal film, and forming a second electrode film having a non-oriented or amorphous structure on the dielectric film or the metal film.

Disclosed is a method of manufacturing a piezoelectric thin film resonator on a non-silicon substrate, including the following steps: depositing a copper thin film on a silicon wafer; coating photoresist on the copper thin film to perform photoetching so as to remove photoresist in an air gap region under the piezoelectric thin film resonator to be disposed; electroplating-depositing a copper layer, and removing photoresist to obtain a stepped peel sacrifice layer; coating polyimide and performing imidization by heat treatment, making a sandwich structure of the piezoelectric thin film resonator above the polyimide layer; performing etching for the polyimide layer in a region not covered by the piezoelectric thin film resonator by oxygen plasma; placing the obtained device into a copper corrosion solution to dissolve the copper around and under the piezoelectric thin film resonator, attaching a drum coated with polyvinyl alcohol glue onto the piezoelectric thin film resonator, releasing and peeling it from the silicon wafer and then transferring it to a desired non-silicon substrate; washing the drum with hot water to separate the drum from the piezoelectric thin film resonator so as to complete the manufacturing process.

In some embodiments, the present disclosure relates to a method for recovering degraded device performance of a piezoelectric device. The method includes operating the piezoelectric device in a performance mode by applying one or more voltage pulses to the piezoelectric device, and determining that a performance parameter of the piezoelectric device has a first value that has deviated from a reference value by more than a predetermined threshold value during a first time period. During a second time period, the method further includes applying a bipolar loop to the piezoelectric device, comprising positive and negative voltage biases. During a third time period, the method further includes operating the piezoelectric device in the performance mode, wherein the performance parameter has a second value. An absolute difference between the second value and the reference value is less than an absolute difference between the first value and the reference value.

The present invention relates to a energy conversion device (100) configured to convert a light signal into an electrical signal, comprising: an actuator element (50), substantially planar, having at least one activatable portion (30), said activatable portion comprising a photomobile polymeric material; a transducer element (60), substantially planar, having at least a portion of piezoelectric material; wherein said actuator element (50) is coupled to said transducer element (60) so that, at a light beam incident on said photomobile polymeric material, a movement of said transducer element (60) is activated through a movement of said activatable portion (30), said movement of said transducer element (60) providing the generation of a potential difference at the terminal ends of said portion of piezoelectric material.

The present invention also relates to a method of production of the aforesaid device.

There is provided a piezoelectric stack, including: a substrate; an electrode film; and a piezoelectric film which is comprised of alkali niobium oxide of a perovskite structure represented by a composition formula of (K.sub.1-xNa.sub.x)NbO.sub.3 (0<x<1), wherein the piezoelectric film comprises crystals having a grain size with a standard deviation of 0.42 m or less.

There is provided a piezoelectric stack, including: a substrate; an electrode film; and a piezoelectric film which is comprised of alkali niobium oxide of a perovskite structure represented by a composition formula of (K.sub.1-xNa.sub.x)NbO.sub.3 (0<x<1), wherein the piezoelectric film comprises crystals having a grain size with a standard deviation of more than 0.42 m.

A method of forming a monolithic integrated PMUT and CMOS with a coplanar elastic, sealing, and passivation layer in a single step without bonding and the resulting device are provided. Embodiments include providing a CMOS wafer with a metal layer; forming a dielectric over the CMOS; forming a sacrificial structure in a portion of the dielectric; forming a bottom electrode; forming a piezoelectric layer over the CMOS; forming a top electrode over portions of the bottom electrode and piezoelectric layer; forming a via through the top electrode down to the bottom electrode and a second via down to the metal layer through the top electrode; forming a second metal layer over and along sidewalls of the first and second via; removing the sacrificial structure, an open cavity formed; and forming a dielectric layer over a portion of the CMOS, the open cavity sealed and an elastic layer and passivation formed.

Techniques are disclosed for monolithic co-integration of thin-film bulk acoustic resonator (TFBAR, also called FBAR) devices and III-N semiconductor transistor devices. In accordance with some embodiments, one or more TFBAR devices including a polycrystalline layer of a piezoelectric III-N semiconductor material may be formed alongside one or more III-N semiconductor transistor devices including a monocrystalline layer of III-N semiconductor material, over a commonly shared semiconductor substrate. In some embodiments, either (or both) the monocrystalline and the polycrystalline layers may include gallium nitride (GaN), for example. In accordance with some embodiments, the monocrystalline and polycrystalline layers may be formed simultaneously over the shared substrate, for instance, via an epitaxial or other suitable process. This simultaneous formation may simplify the overall fabrication process, realizing cost and time savings, at least in some instances.

A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

There is provided a piezoelectric laminate, including: a substrate; a base layer formed on the substrate; and a piezoelectric film containing alkali niobium oxide and having a perovskite structure, which is formed on the base layer, as a polycrystalline film, and represented by a composition formula of (K.sub.1-xNa.sub.x)NbO.sub.3 (0<x<1), wherein a crystal grain group forming the piezoelectric film includes a crystal grain having a ratio of 0.01 nm.sup.1 or more and 0.1 nm.sup.1 or less, which is the ratio of an outer peripheral length to a cross-sectional area when observing a cross-section of the crystal grain.