Methods of fabricating metal oxide and/or metalloid oxide coatings and related products and systems are generally described.

Methods of fabricating metal oxide and/or metalloid oxide coatings and related products and systems are generally described.

A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.

A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.

The present disclosure provides a solar cell and a method for preparing the same. The solar cell includes a semiconductor substrate, a first heavily doped layer, a front electrode, an emitter layer, and a back electrode. The first heavily doped layer and the front electrode are disposed on the front surface of the semiconductor substrate. The first heavily doped layer is disposed between the front electrode and the semiconductor substrate. The emitter layer is disposed between the back electrode and the semiconductor substrate.

The present disclosure provides a solar cell and a method for preparing the same. The solar cell includes a semiconductor substrate, a first heavily doped layer, a front electrode, an emitter layer, and a back electrode. The first heavily doped layer and the front electrode are disposed on the front surface of the semiconductor substrate. The first heavily doped layer is disposed between the front electrode and the semiconductor substrate. The emitter layer is disposed between the back electrode and the semiconductor substrate.

A solar cell and a manufacturing method are provided. In one example, a solar cell includes: a semiconductor substrate including a first surface having a plurality of first texture structures, where a first texture structure includes a side surface and a top surface; a tunneling layer, located on the first surface of the semiconductor substrate; a doped semiconductor layer, located on a surface of the tunneling layer away from the semiconductor substrate; an electrode, located on a surface of the doped semiconductor layer away from the semiconductor substrate and in contact with the doped semiconductor layer; and metal crystals distributed in the doped semiconductor layer at a position in contact with the electrode. A distribution density of the metal crystals in the doped semiconductor layer located on the top surface is greater than that in the doped semiconductor layer located on the side surface.

A solar cell and a manufacturing method are provided. In one example, a solar cell includes: a semiconductor substrate including a first surface having a plurality of first texture structures, where a first texture structure includes a side surface and a top surface; a tunneling layer, located on the first surface of the semiconductor substrate; a doped semiconductor layer, located on a surface of the tunneling layer away from the semiconductor substrate; an electrode, located on a surface of the doped semiconductor layer away from the semiconductor substrate and in contact with the doped semiconductor layer; and metal crystals distributed in the doped semiconductor layer at a position in contact with the electrode. A distribution density of the metal crystals in the doped semiconductor layer located on the top surface is greater than that in the doped semiconductor layer located on the side surface.

A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.

A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.