A graphene photodetector includes a first graphene absorption layer connected to first and second metal electrodes, the first and second metal electrodes defining a channel on the first graphene layer operating as a plasmonic waveguide, a gate dielectric layer interposed between the first graphene layer and a second graphene layer. The second graphene layer used for electrical gating and includes first and second gate electrodes proximate to the first and the second metal electrodes, respectively. The photodetector also includes a photonic dielectric waveguide with a planarized cladding underneath the gate dielectric layer, the first and second gate electrodes remaining interposed therebetween. The distance between the first and the second metal electrodes, defining the width of the channel cross-section, is between 100 nm and 600 nm, and the distance between the first and second gate electrodes is at least 60% of the distance between the first and second metal electrodes.

Disclosed are a sensing pixel and an image sensor including the same. The sensing pixel includes a determination region, which includes one or more floating body transistors, and an integration region that is adjacent to a floating body region of one of the one or more floating body transistors, absorbs light to generate an electron-hole pair including an electron and a positive hole, and transfers the electron or the positive hole to the floating body region of the one floating body transistor.

According to example embodiments, an electronic device includes channel layer including a graphene layer electrically contacting a quantum dot layer including a plurality of quantum dots, a first electrode and a second electrode electrically connected to the channel layer, respectively, and a gate electrode configured to control an electric current between the first electrode and the second electrode via the channel layer. A gate insulating layer may be between the gate electrode and the channel layer.

A semiconductor device includes a substrate, a logic gate structure, a photosensitive gate structure, a hard mask layer, a first spacer, a first source, a first drain, a second spacer, a second source and a second drain. The logic gate structure and the photosensitive gate structure are disposed on a surface of the substrate. The hard mask layer covers the logic gate structure, the photosensitive gate structure and the surface of the substrate. The first spacer overlies the hard mask layer conformal to a sidewall of the logic gate structure. The first source and drain are respectively disposed in the substrate at two opposite sides of the logic gate structure. The second spacer overlies the hard mask layer conformal to a sidewall of the photosensitive gate structure. The second source and drain are respectively disposed in the substrate at two opposite sides of the photosensitive gate structure.

A photodetector is provided with a thin film double layer heterostructure. The photodetector is comprised of: a substrate; a channel layer of a transistor deposited onto a top surface of the substrate; a source layer of the transistor deposited on the top surface of the substrate; a drain layer of the transistor deposited on the top surface of the substrate, the source layer and the drain layer disposed on opposing sides of the channel layer; a barrier layer deposited onto the channel layer; and a light absorbing layer deposited on the barrier layer. The light absorbing layer is configured to absorb light and, in response to light incident on the light absorbing layer, electrical conductance of the channel layer is changed through hot carrier tunneling from the light absorbing layer to the channel layer.

A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (1042), in which electric charges (e) generated in a photo-electric conversion region (1052c1) formed under at least one portion of the read circuits (Tr1, Tr2) are collected to an electric charge accumulation region (1052a) formed on one surface side of the semiconductor substrate (1042) of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.

A light receiving element includes a first semiconductor layer of a first conductivity type to which a first potential is to be applied, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer, first and second regions of the first conductivity type formed in an upper portion of the second semiconductor layer, a first electrode that is located on the first region and is to be subjected to application of a second potential, a second electrode located on the second region, an insulation layer formed on the second semiconductor layer between the first and the second regions, and a gate electrode that is formed on the insulation layer and is to be subjected to application of a gate voltage. A current readout unit detects, as a pixel signal reflecting an amount of light received, a current flowing from the first region to the second region.

This disclosure provides systems, methods, and apparatus related to photodetectors. In one aspect, a photodetector device comprises a substrate, a polycrystalline layer disposed on the substrate, and a first electrode and a second electrode disposed on the polycrystalline layer. The polycrystalline layer comprises nanograins with grain boundaries between the nanograins. The nanograins comprise a semiconductor material. A doping element comprising a halogen is segregated at the grain boundaries. A length of the polycrystalline layer is between and separating the first electrode and the second electrode.

MOSFET phototransistors, methods of operating the MOSFET phototransistors and methods of making the MOSFET phototransistors are provided. The phototransistors have a buried electrode configuration, which makes it possible to irradiate the entire surface areas of the radiation-receiving surfaces of the phototransistors.

A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.