A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, and a first interface between the second semiconductor layer and the light-absorbing layer. The second semiconductor layer includes a first region having a first dopant and a second region surrounding the first region. The light-absorbing layer includes a third region having the first dopant and a fourth region surrounding the third region. The first dopant of the first region close to the first interface has a first doping concentration, and the first dopant of the third region close to the first interface has a second doping concentration larger than the first doping concentration.

A carrier board with light source image module includes a substrate, a cavity, a perforated section, an image sensor, and a light-emitting device. The substrate has a first surface and a second surface, which are opposite to each other. The cavity is disposed on the substrate and has a bottom surface. The altitude of the bottom surface is lower than the first surface. The perforated section is disposed on at least a part of the cavity, penetrating the first surface and the second surface. The image sensor is partially located in the cavity and partially located in the perforated section. The altitude of the surface of the image sensor is higher than the first surface. The light-emitting device is disposed on the first surface and adjacent to the image sensor. The surface of the light-emitting device is between the first surface and the surface of the image sensor.

A terahertz device includes slots formed in a conductive layer, connection slits formed in the conductive layer, and active elements disposed in the slots. The slots are annular. The conductive layer includes first electrodes defined by the slots, a connection line disposed in the connecting slits and electrically connecting the first electrodes located inside two adjacent ones of the slots, and a second electrode located outside the slots. Each of the connecting slits connects the two adjacent ones of the slots and insulates the connection line from the second electrode. The active elements include two active elements provided for each of the first electrodes. The two active elements are located at opposite sides of the corresponding one of the first electrodes with respect to a center of the corresponding one of the slots in a plan view taken from a direction orthogonal to the front surface.

A method for manufacturing a light-emitting photosensitive sensor structure includes preparing a package substrate, wherein the package substrate has a cavity formed by a light-shield frame performing enclosing, and the bottom of the cavity is provided with a first line layer, forming a light transmission channel on the light-shield frame, mounting a light-emitting photosensitive sensor in the cavity of the package substrate so that the photosensitive luminescent device is electrically connected to the first line layer, filling the cavity and the light transmission channel with a transparent encapsulating material to form a transparent packaging layer on the photosensitive luminescent device, forming a light-shield layer on the transparent packaging layer, and performing cutting along a cutting line of the light-shield frame to obtain a light-emitting photosensitive sensor structure having a directional light transmission channel.