An object of the present invention is to provide a dry pump and an exhaust gas treatment method which can improve an effect of inhibiting a reaction product from adhering to the inside of a gas outlet port of the dry pump, a gas exhaust pipe, or the like and can also improve an energy saving effect. To attain the object, the present invention includes the gas exhaust pipe disposed to be connected to the gas outlet port of the dry pump and to a gas inlet port of a detoxification device, and a heat exchanger which heats a diluent gas introduced therein using a heat generated from the dry pump and introduces the heated diluent gas into the gas exhaust pipe to heat a used gas to a temperature of not less than a predetermined value.

There is provided a nitride semiconductor laminate, including: a substrate; an electron transit layer provided on the substrate and containing a group III nitride semiconductor; and an electron supply layer provided on the electron transit layer and containing a group III nitride semiconductor, wherein a surface force A of the electron supply layer acting as an attractive force for attracting a probe and a surface of the electron supply layer when measured using the probe consisting of a glass sphere with a diameter of 1 mm covered with Cr, is stronger than a surface force B of Pt when measured under the same condition, and an absolute value |A−B| of a difference between them is 30 μN or more.

A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

Methods for preparing epitaxial wafers are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G. An epitaxial layer is deposited on a substrate sliced from the silicon ingot.

A system and/or method for coating a substrate. The system may include a chuck for holding and rotating the substrate, a dispensing subsystem for dispensing a coating material onto the substrate, and a shield member. The shield member may be movable towards and away from the substrate during the coating procedure. The shield member may have an inverted funnel shape. The shield member may include a central chamber through which a solvent vapor flows and a peripheral chamber that is fluidly separated from the central chamber through which a gas flows. During a coating procedure, the shield member may be moved very close to the substrate and the solvent vapor and gas may flow onto the substrate to create a solvent rich ambient around the substrate and prevent aerosols of the coating material from redepositing onto the substrate after being flung off due to spinning of the substrate.

The invention relates to a method for fabricating a semiconductor structure. The method comprises fabricating a photonic crystal structure of a first material, in particular a first semiconductor material and selectively removing the first material within a predefined part of the photonic crystal structure. The method further comprises replacing the first material within the predefined part of the photonic crystal structure with one or more second materials by selective epitaxy. The one or more second materials may be in particular semiconductor materials. The invention further relates to devices obtainable by such a method.

A transistor structure can include a semiconductor-on-insulator substrate that includes an upper substrate region separated from a lower substrate region by a buried insulator. Shallow halo implant regions can be formed in an upper substrate region having a peak concentration at a first depth within the upper substrate region. Deep halo implant regions can be formed in the upper substrate region having a peak concentration at a second depth lower than the first depth. An epitaxial layer can be formed on top of the upper substrate region and below the control gate. Source and drain regions both of a second conductivity type formed in at least the epitaxial layer. In some embodiments, a lower substrate region can be biased for a double-gate effect.

A crystal substrate 1 includes an underlying layer 2 and a thick film 3. The underlying layer 2 is composed of a crystal of a nitride of a group 13 element and includes a first main face 2a and a second main face 2b. The thick film 3 is composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layer 2 includes a low carrier concentration region 5 and a high carrier concentration region 4 both extending between the first main face 2a and the second main face 2b.

The present disclosure provides a DNA-targeting RNA that comprises a targeting sequence and, together with a modifying polypeptide, provides for site-specific modification of a target DNA and/or a polypeptide associated with the target DNA. The present disclosure further provides site-specific modifying polypeptides. The present disclosure further provides methods of site-specific modification of a target DNA and/or a polypeptide associated with the target DNA The present disclosure provides methods of modulating transcription of a target nucleic acid in a target cell, generally involving contacting the target nucleic acid with an enzymatically inactive Cas9 polypeptide and a DNA-targeting RNA. Kits and compositions for carrying out the methods are also provided. The present disclosure provides genetically modified cells that produce Cas9; and Cas9 transgenic non-human multicellular organisms.

An AlN monocrystal plate disclosed herein may include: a first surface in a thickness direction; and a second surface opposing the first surface. A metal component containing region may be disposed substantially parallel to the first surface in an intermediate portion between the first surface and the second surface. In the metal component containing region, a plurality of metal components may be introduced and distributed. A type of the metal components may be Ga.