The present disclosure provides a DNA-targeting RNA that comprises a targeting sequence and, together with a modifying polypeptide, provides for site-specific modification of a target DNA and/or a polypeptide associated with the target DNA. The present disclosure further provides site-specific modifying polypeptides. The present disclosure further provides methods of site-specific modification of a target DNA and/or a polypeptide associated with the target DNA The present disclosure provides methods of modulating transcription of a target nucleic acid in a target cell, generally involving contacting the target nucleic acid with an enzymatically inactive Cas9 polypeptide and a DNA-targeting RNA. Kits and compositions for carrying out the methods are also provided. The present disclosure provides genetically modified cells that produce Cas9; and Cas9 transgenic non-human multicellular organisms.

This invention provides a cleaning method that uses a cleaning gas composition for a semiconductor manufacturing device, including a monofluorohalogen compound represented by XF (in which X is Cl, Br or I) as the main component, and provides a method for removing unwanted film, such as a Si-containing deposit, attached to the interior of the processing room or processing vessel after a processing operation without damaging the interior of the processing room or processing vessel using such monofluorohalogen compound.

Provided is a method of manufacturing a nanorod. The method comprising comprises the steps of: providing a growth substrate and a support substrate; epitaxially growing a nanomaterial layer onto one surface of the growth substrate; forming a sacrificial layer on one surface of the support substrate; bonding the nanomaterial layer with the sacrificial layer; separating the growth substrate from the nanomaterial layer; flattening the nanomaterial layer; forming a nanorod by etching the nanomaterial layer; and separating the nanorod by removing the sacrificial layer.

An epitaxial silicon wafer includes: a silicon wafer doped with phosphorus as a dopant and having an electrical resistivity of less than 1.0 m Ω.Math.cm; and an epitaxial film formed on the silicon wafer. The silicon wafer includes: a main surface to which a (100) plane is inclined; and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 0°30′ to 0°55′ in any direction with respect to an axis perpendicular to the main surface. The epitaxial silicon wafer has at most 1/cm.sup.2 of a density of a hillock defect generated thereon.

There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over a first portion of the fin structure, and an epitaxial region formed in a second portion of the fin structure. The epitaxial region can include a first semiconductor layer and an n-type second semiconductor layer formed over the first semiconductor layer. A lattice constant of the first semiconductor layer can be greater than that of the second semiconductor layer.

A processing apparatus includes: a processing container; a first injector extending in a longitudinal direction along an inner wall of the processing container, wherein the first injector includes a first introduction port formed at a lower end and first gas holes formed in the extending portion; and a second injector extending upward along the inner wall of the processing container, folded back at an upper portion, and then extending downward, wherein the second injector includes a second introduction port formed at a lower end of an upward extending portion and second gas holes formed in a downward extending portion. The first injector includes a first throttle portion having a cross-sectional area decreasing as a distance from the first introduction port increases. The second injector includes a second throttle portion formed in the downward extending portion and having a cross-sectional area decreasing as a distance from the second introduction port increases.

Semiconductor nanofibers are produced at room temperature in a pressure vessel. A semiconductor wafer and metal catalyst are introduced into the pressure vessel. The pressure vessel is filled with a background gas. A nanofiber growth element is introduced into the pressure vessel. For example, the semiconductor may be ablated by a laser. The semiconductor is retained in the pressure vessel for a prolonged period of time until nanofiber growth appears.

Provided is a susceptor, capable of preventing occurrence of scratches on the back surface of a wafer attributable to lift pins, and reducing unevenness of the in-surface temperature distribution of the wafer. A susceptor according to one embodiment of this disclosure has a susceptor main body and a plate-shaped member, and when a wafer is conveyed, the front surface of the plate-shaped member ascended by lift pins supports the central part of the back surface of the wafer by surface contact. A separation space between the plate-shaped member and the susceptor main body, in a state in which the plate-shaped member is placed on the recessed part, enters further into the central side of the plate-shaped member, in a direction from the front surface to the back surface of the susceptor.

Polysilicon films (P1,P2) are simultaneously formed on a wafer (W1) and a monitor wafer (W2) under the same growth condition in a wafer process. At least one of a film thickness and phosphorus concentration of the polysilicon film (P2) formed on the monitor wafer (W2) is measured to obtain a measured value. One of a plurality of mask patterns (A,B,C) is selected based on the measured value. The polysilicon film (P1) formed on the wafer (W1) is etched using the selected mask pattern to form the polysilicon resistor (5).