H10F77/227

Laser-transferred IBC solar cells
09570638 · 2017-02-14 · ·

A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized to ablate, transfer material, and/or laser-dope or laser fire contacts. Laser ablation can be utilized to remove and pattern openings in a passivated or emitter layer. Laser transferring may then be utilized to transfer dopant and/or contact materials to the patterned openings, thereby forming an interdigitated finger pattern. The laser processing system may also be utilized to plate a conductive material on top of the transferred dopant or contact materials.

Method of manufacturing a hybrid emitter all back contact solar cell
09564551 · 2017-02-07 · ·

A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

Solar cell fabricated by simplified deposition process
09559236 · 2017-01-31 · ·

Methods of fabricating solar cells using simplified deposition processes, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell involves loading a template substrate into a deposition chamber and, without removing the template substrate from the deposition chamber, performing a deposition method. The deposition method involves forming a first silicon layer on the template substrate, the first silicon layer of a first conductivity type. The deposition method also involves forming a second silicon layer on the first silicon layer, the second silicon layer of the first conductivity type. The deposition method also involves forming a third silicon layer above the second silicon layer, the third silicon layer of a second conductivity type. The deposition method also involves forming a solid state doping layer on the third silicon layer, the solid state doping layer of the first conductivity type.

Solar cell and solar cell module

Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter formed on part of the tunneling layer in the first region; and a second emitter formed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode formed in the second region and configured to electrically connect with the second emitter.

Light-induced aluminum plating on silicon for solar cell metallization

Methods for light-induced electroplating of aluminum are disclosed herein. Exemplary methods may comprise preparing an ionic liquid comprising aluminum chloride (AlCl.sub.3) and an organic halide, placing the silicon substrate into the ionic liquid, illuminating the silicon substrate, the illumination passing through the ionic liquid, and depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes an applied current that does not exceed a photo-generated current generated by the illumination.

SOLAR CELL MODULE AND SOLAR CELL

A solar cell includes: a first bus bar electrode disposed on a first end portion of the solar cell, and to which the wiring member is connected; a second bus bar electrode disposed on a second end portion of the solar cell, and to which the wiring member is connected; first finger electrodes disposed on the solar cell, electrically connected to the first bus bar electrode, and extending in a first direction toward the second bus bar electrode; second finger electrodes disposed on the solar cell, electrically connected to the second bus bar electrode, and extending in a second direction toward the first bus bar electrode. Each first finger electrode has a thickness which decreases as a distance to the second bus bar electrode decreases, and each second finger electrode has a thickness which decreases as a distance to the first bus bar electrode decreases.

INTERDIGITATED BACK CONTACT CELL AND MANUFACTURING METHOD THEREOF
20250143009 · 2025-05-01 · ·

The present disclosure provides an interdigitated back contact cell and a manufacturing method thereof. The interdigitated back contact cell includes: a substrate including a front side and a back side, the front side being arranged opposite to the back side; where, along a first direction, first functional regions and second functional regions are alternately arranged on the back side of the substrate; an isolation region is arranged between every adjacent first functional region and second functional region; and the first emitter is spatially isolated from one adjacent second emitter by a corresponding isolation region; and the first diffusion layer is in contact with at least one adjacent second diffusion layer in a corresponding region of a corresponding isolation region. The interdigitated back contact cell provided by the present disclosure has a lower reverse breakdown voltage, a high component reliability, and a high cell efficiency.

Solar cell and solar cell module

Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter formed on part of the tunneling layer in the first region; and a second emitter formed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode formed in the second region and configured to electrically connect with the second emitter.

Solar cell and solar cell module

Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter formed on part of the tunneling layer in the first region; and a second emitter formed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode formed in the second region and configured to electrically connect with the second emitter.

SOLAR CELL, METHOD FOR PREPARING THE SAME, AND PHOTOVOLTAIC MODULE
20250221089 · 2025-07-03 ·

Provided are a solar cell, a method for preparing a solar cell, and a photovoltaic module, relating to the field of photovoltaics. The solar cell includes a substrate, a dielectric layer and a doped semiconductor layer which are stacked, a passivation layer, and electrodes. The substrate has a first surface. The first surface includes an edge region and a center region. The edge region surrounds the center region. The edge region is substantially flush with or closer to the second surface than the center region. The dielectric layer is formed over the center region. The passivation layer covers the edge region and a surface of the doped semiconductor layer facing away the dielectric layer. The electrodes are located in the center region, and penetrate the passivation layer in a thickness direction to be in electrical contact with the doped semiconductor layer.