Embodiments of the invention generally relate to device fabrication of thin films used as solar devices or other electronic devices, and include textured back reflectors utilized in solar applications. In one embodiment, a method for forming a textured metallic back reflector which includes depositing a metallic layer on a gallium arsenide material within a thin film stack, forming an array of metallic islands from the metallic layer during an annealing process, removing or etching material from the gallium arsenide material to form apertures between the metallic islands, and depositing a metallic reflector layer to fill the apertures and cover the metallic islands. In another embodiment, a textured metallic back reflector includes an array of metallic islands disposed on a gallium arsenide material, a plurality of apertures disposed between the metallic islands and extending into the gallium arsenide material, a metallic reflector layer disposed over the metallic islands, and a plurality of reflector protrusions formed between the metallic islands and extending from the metallic reflector layer and into the apertures formed in the gallium arsenide material.

A method of forming a multijunction solar cell comprising at least an upper subcell, a middle subcell, and a lower subcell, the method including forming a first alpha layer over said middle solar subcell using a surfactant and dopant including selenium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming a lower solar subcell over said grading interlayer such that said lower solar subcell is lattice mismatched with respect to said middle solar subcell.

A light receiving apparatus includes a light receiving device including a compound semiconductor substrate, photodiodes, and bump electrodes; and a semiconductor integrated device including a silicon substrate and read-out circuits. Bonded, the integrated device and the light receiving device face each other in a direction of a first axis through the bump electrodes. The light receiving device has a back surface with first and second back edges extending in a direction of a second axis intersecting with the first axis. The light receiving device has a first slope face extending from the first back edge along a first reference plane, and a second slope face extending from the second back edge along a second reference plane. The back surface of the light receiving device extends along a third reference plane intersecting with the first axis. The first and second reference planes are inclined with respect to the third reference plane.

The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure and a passivating shell (209) that encloses at least a portion of the nanowire (205). In a first aspect of the invention, the passivating shell (209) of comprises a light guiding shell (210), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbing order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.

The present invention discloses a manufacturing method of a solar cell, including: forming an electricity generation layer on a substrate; forming an ohmic contact layer on a surface of the electricity generation layer facing away from the substrate; forming a back electrode on a surface of the substrate facing away from the electricity generation layer; and forming a top electrode on a surface of the ohmic contact layer facing away from the electricity generation layer using a printing process. The present invention discloses a solar cell. The present invention solves the problem of low capacity of the solar cell at present.

A semifinished product of a multi-junction solar cell includes a first semiconductor body that is designed as a first partial solar cell and has a first band gap, a second semiconductor body that is designed as a second partial solar cell and has a second band gap. The first semiconductor body and the second semiconductor body form a bonded connection to a tunnel diode and the first band gap is different from the second band gap. A first substrate material is adapted as a substrate layer, wherein a sacrificial layer is formed between the first substrate material and the first partial solar cell and the first substrate material is removed from the first semiconductor body, the sacrificial layer being destroyed in the process.

A single chip including an optoelectronic device on the semiconductor layer in a first region, the optoelectronic device comprises a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is above and in direct contact with the semiconductor layer, the active region is above and in direct contact with the bottom cladding layer, and the top cladding layer is above and in direct contact with the active region, a silicon device on the substrate extension layer in a second region, a device insulator layer substantially covering both the optoelectronic device in the first region and the silicon device in the second region, and a waveguide embedded within the device insulator layer in direct contact with a sidewall of the active region of the optoelectronic device.

A multi-junction optoelectronic device and method of manufacture are disclosed. The method comprises providing a first p-n structure on a substrate, wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a Group III-V semiconductor. The method includes providing a second p-n structure, wherein the second p-n structure comprises a second base layer of a second semiconductor with a second bandgap, wherein a lattice constant of the second semiconductor matches a lattice constant of the first semiconductor, and wherein the second semiconductor comprises a Group IV semiconductor. The method also includes lifting off the substrate the multi-junction optoelectronic device having the first p-n structure and the second p-n structure, wherein the multi-junction optoelectronic device is a flexible device.

An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.