Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (13). Also provided are: a method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including (A) a step of forming a sacrificial layer (2) on a substrate (1), (B) a step of forming a chip of a thermoelectric conversion material on the sacrificial layer formed in the step (A), (C) a step of annealing the chip of a thermoelectric conversion material formed in the step (B), and (D) a step of peeling the chip of a thermoelectric conversion material annealed in the step (C); and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

Methods, ink compositions, and 3D conformal printed flexible films. The method may include aerosol jet printing a thermoelectric ink composition, followed by photonic or other sintering of the ink to remove surfactant included therein, and to convert the thermoelectric nanoparticles of the ink composition into a dense structure capable of charge carrier transport. The ink compositions may be solution-processed semimetal-chalcogenides (e.g., Te containing materials) in a suitable carrier (e.g., polyol(s), alcohol(s), etc.). A surfactant (e.g., PVP) may be present in the ink. Within seconds of photonic sintering, the electrical conductivity of the printed film is dramatically increased from non-conductive to a value on the order of at least 1×10.sup.4 S/m. The films may demonstrate a room-temperature power factor of at least 500 μWm.sup.−1K.sup.−2. The realized values of 730-2200 μWm.sup.−1K.sup.−2 achieved are among the highest values reported for flexible thermoelectric films. The film is durable (e.g., 500 bending cycles with no significant performance drop).

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn.sup.2+ and Se.sup.2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn.sub.1−xSe (where 0<x<1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.

Various examples of thin film thermoelectric (TE) devices, their fabrication and applications are presented. In one example, a thin film TE device includes a first substrate including a void; a p-type TE element attached to the first substrate at a first end and extending over the void to a second end; an n-type TE element attached to the first substrate at a first end and extending over the void to a second end adjacent to the second end of the p-type TE element; and an interconnection coupling the second ends of the p-type TE element and the n-type TE element. In some examples, TE device layers can be vacuum sealed between a supporting substrate and a transparent substrate. A thermal spreader can include TE modules having a distribution of TE elements that operate in generating or cooling modes to cool IC or device hotspots using self-generated power.

A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability at a low temperature, particularly at a temperature corresponding to the driving temperature of a thermoelectric element, and also exhibits an excellent thermoelectric performance index through an increase in a power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same:
V.sub.1-xM.sub.xSn.sub.4Bi.sub.2Se.sub.7-yTe.sub.y  [Chemical Formula 1]
In the above Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, and y is greater than 0 and less than or equal to 1.

A thermoelectric module according to one embodiment of the present invention comprises: a first substrate; a thermoelectric element disposed on the first substrate; a second substrate disposed on the thermoelectric element and having a smaller area than the first substrate; a sealing part disposed on the first substrate and surrounding a side surface of the thermoelectric element; and a wire part connected to the thermoelectric element, drawn out through the sealing part, and supplying power to the thermoelectric element, wherein the sealing part has a through hole through which the wire part passes, and the through hole is disposed closer to the second substrate than the first substrate.

A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

Embodiments relate to methods of manufacturing and operating nano-scale energy converters and electric power generators. The nano-scale energy converters include two electrodes separated a predetermined distance. The first electrode is manufactured to have a first work function value. The second electrode is manufactured to have a second work function value different from the first work function value. A cavity is formed between the first and second electrodes, and a nanofluid is disposed in the cavity. The nanofluid includes a plurality of nanoparticles.

A method may be provided of manufacturing a thermoelectric leg. The method may include preparing a first metal substrate including a first metal, and forming a first plated layer including a second metal on the first metal substrate. The method may also include disposing a layer including tellurium (Te) on the first plated layer, and forming a portion of the first plated layer as a first bonding layer by reacting the second metal and the Te. The method also includes disposing a thermoelectric material layer including bismuth (Bi) and Te on an upper surface of the first bonding layer, and disposing a second metal substrate, on which a second bonding layer and a second plated layer are formed, on the thermoelectric material layer, and sintering.

The present invention discloses a flexible sensor detection system for medical care and health, including: an information collection module, which uses a wearable device as a carrier, where flexible sensors are respectively arranged on the wearable device; an information transmission module, configured to wirelessly transmit collected information to an information processing and feedback module; and the information processing and feedback module, configured to perform grading treatment on received data information and feed back a health condition corresponding to the data information to the information transmission module, where the information transmission module compares feedback health condition data with a preset health threshold to determine whether to give an alarm. A heart rate ECG band, a breathing band, a shell temperature band, a blood flow rate band, a blood glucose band, a blood oxygen band, and a deep temperature band of the present invention are provided with the built-in flexible sensors.