A thermoelectric conversion material is represented by a composition formula Ag.sub.2S.sub.(1-x)Se.sub.x, where x has a value of greater than 0.01 and smaller than 0.6.

The present disclosure discloses a p-type material of Formula I: AgSb.sub.1-xCd.sub.xTe.sub.2, wherein x is in a range of 0.01-0.07. It further discloses a process of preparation of the p-type material, and the use of the p-type material as a thermoelectric material.

The present disclosure relates to an energy conversion material including: a pair of 2-dimensional active layers; and a property control layer positioned between the 2-dimensional active layers, and the property control layer is changed in any one or more of structure and state depending on an external environmental factor and performs reversible switching between the 2-dimensional active layers.

Provided is an easy-to-process thermoelectric conversion device whose shape can be freely changed. The device is provided containing electrodes and an ionic solid, wherein the ionic solid has: an anionic heterometal complex aggregated to form a crystal lattice; and a cationic species present in interstices of the crystal lattice, and wherein the anionic heterometal complex includes: a metal M1 selected from the group consisting of the elements of Groups 8, 9 and 10 of the Periodic Table and Cr and Mn; a metal M2 selected from the group consisting of the elements of Groups 11 and 12 of the Periodic Table; and a ligand.

The present disclosure relates to an integrated dual-sided all-in-one energy system including a plurality of vertically stacked dual-sided all-in-one energy apparatuses, each including an energy-harvesting device and an energy-storage device disposed on both sides of a substrate, and according to one embodiment of the present disclosure, an integrated dual-sided all-in-one energy system may include a plurality of dual-sided all-in-one energy apparatuses, each including an energy-harvesting device that is formed as an electrode pattern on one side of a substrate and generates electrical energy by harvesting energy based on a temperature difference between a first side and a second side and an energy-storage device that is formed on the other side of the substrate and is selectively connected to the energy-harvesting device based on the electrode pattern to store the generated electrical energy.

Systems, apparatuses, and methods are provided for manufacturing nano-engineered thin-film thermoelectric (NETT) devices for photovoltaic applications, such as NETT converters that harness the coldness of space for satellite applications or for integration with terrestrial PV. An example method can include mounting a thin-film thermoelectric device to a photovoltaic device. The example method can further include mounting a heat sink device to the thin-film thermoelectric device. The example method can further include mounting a radiator device or heat exchanger device to the heat sink device.

An enclosure for a thermoelectric generator may include bonded particles of an allotrope of carbon, such as diamond particles, graphene particles, and/or carbon nanotube particles. A thermoelectric generator system may include one or more thermoelectric generators positioned at least partially within the enclosure. The enclosure may be manufactured using an additive manufacturing process which may include providing particles of an allotrope of carbon, and selectively binding a portion of the particles with a binder material. The bound particles may then be sintered to form the enclosure.

A chalcogen-containing compound that exhibits low thermal conductivity and excellent thermoelectric properties, and exhibits excellent phase stability even at relatively low temperature, a method for preparing the same, and a thermoelectric element including the same.

A plate-shaped thermoelectric conversion material having a first main surface and a second main surface on the opposite side of the first main surface is formed of semiconductor grains that are in contact with one another. The semiconductor grains each include a particle composed of a semiconductor containing an amorphous phase, and an oxidized layer covering the particle. The distance between the first main surface and the second main surface exceeds 0.5 mm.

The present invention relates to a thermoelectric material and, specifically, to a thermoelectric material capable of improving the figure of merit and a preparation method therefor. In the present invention, the thermoelectric material may comprise: a matrix compound having a composition of chemical formula 1 or 2; and particles having a composition of chemical formula 3 dispersed in the matrix compound. (AB.sub.2).sub.x(Bi.sub.2Se.sub.2.7Te.sub.0.3).sub.1-x, (CB).sub.x(Bi.sub.2Se.sub.2.7Te.sub.0.3).sub.1-x, D.sub.yE.sub.z.