The present invention relates to a method for manufacturing a thermoelectric half-cell which utilises the metallization for obtaining both the electric and thermal contact required to form a functional thermoelectric cell.

A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

New thermoelectric materials, such as Mg.sub.3Bi.sub.2-based Zintl phase compounds are described, where the semi-metallic Mg.sub.3.2Bi.sub.2 show an unexpectedly large Seebeck coefficient at 350 K and enhanced thermoelectric performances.

A method may be provided of manufacturing a thermoelectric leg. The method may include preparing a first metal substrate including a first metal, and forming a first plated layer including a second metal on the first metal substrate. The method may also include disposing a layer including tellurium (Te) on the first plated layer, and forming a portion of the first plated layer as a first bonding layer by reacting the second metal and the Te. The method also includes disposing a thermoelectric material layer including bismuth (Bi) and Te on an upper surface of the first bonding layer, and disposing a second metal substrate, on which a second bonding layer and a second plated layer are formed, on the thermoelectric material layer, and sintering.

Disclosed is a method for producing a Heusler-based phase thermoelectric material using an amorphous phase precursor. More specifically disclosed is a method for producing a powder or bulk thermoelectric material having a microstructure including a Heusler-based phase with a thermoelectric effect by crystallization of an amorphous phase precursor prepared by a non-equilibrium processes. Also disclosed is a device using a Heusler-based phase thermoelectric material produced by the method. The method largely avoids the efficiency problems of conventional methods, including low productivity in scaling up caused by long annealing time, high annealing temperature, and contamination during nanopowder production, achieving improved process efficiency. In addition, the method enables efficient production of a thermoelectric material having a nano-sized microstructure that is difficult to produce by a conventional method.

According to one embodiment of the present invention, a thermoelectric leg comprises: a thermoelectric material layer comprising Bi and Te; a first metal layer and a second metal layer respectively arranged the thermoelectric material layer; a first adhesive layer arranged between the thermoelectric material layer and the first metal layer and comprising the Te, and a second adhesive layer arranged between the thermoelectric material layer and the second metal layer and comprising the Te; and a first plating layer arranged between the first metal layer and the first adhesive layer, and a second plating layer arranged between the second metal layer and the second adhesive layer, wherein the thermoelectric material layer is arranged between the first metal layer and the second metal layer, the amount of the Te is higher than the amount of the Bi in the thermoelectric material layer.

Provided by the present invention is a magnesium-antimony-based (Mg—Sb-based) thermoelenient, preparation method and application thereof. The Mg—Sb-based. thermoelement comprises: a substrate layer of a Mg—Sb-based. thermoelectric material positioned in the center of the thermoelement, transitional layers that are attached to the two surfaces of the substrate layer, and two electrode layer that are respectively attached to the surfaces of the two transitional layers; the transitional layers are made of a magnesium-copper alloy and/or magnesium-aluminum alloy, and the electrode layer is made of copper. The transitional layer and the electrode layer which are developed in the present invention and which are suitable for a Mg—Sb-based thermoelectric material have great significance and prospects in application. The electrode layer enable the Mg—Sb-based thermoelectric material to have an opportunity to enter the market and realize commercialization. Compared with the existing bismuth telluride thermoelectric devices in the market, the thermoelectric device prepared has lower costs, may simultaneously save the rare element tellurium, and is beneficial in saving energy and protecting the environmental.

Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source, and a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure. A powering structure is arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. The thermoelectric generator can include IC packaging material that is made from thermoelectric semiconductor materials.

The present disclosure relates to a thermoelectric material, and more specifically to a superlattice thermoelectric material and a thermoelectric device using the same. The superlattice thermoelectric material has a composition of a following Chemical Formula 1:
(AX).sub.n(D.sub.2X′.sub.3).sub.m  ,<Chemical Formula 1> wherein, in the Chemical Formula 1, A is at least one of Ge, Sn, and Pb, X is a chalcogen element, and at least one of S, Se, and Te, D is at least one of Bi and Sb, each of n and m is an integer between 1 and 100, and A or X is at least partially substituted with a dopant.

The present invention provides apparatuses comprising a plurality of junctions providing a Seebeck effect, configured as alternating hot and cold junctions. The apparatus can be configured such that the cold junctions exhibit a different thermal behavior than the hot junctions in response to incident radiation. The junctions can be connected in series, such that the sum of the Seebeck effect from the plurality of junctions provides a sensitive, inherently calibrated indication of heating of the apparatus responsive to incident radiation, and therefore of the radiation itself.