A plate-shaped thermoelectric conversion material having a first main surface and a second main surface on the opposite side of the first main surface is formed of semiconductor grains that are in contact with one another. The semiconductor grains each include a particle composed of a semiconductor containing an amorphous phase, and an oxidized layer covering the particle. The distance between the first main surface and the second main surface exceeds 0.5 mm.

The present invention relates to a thermoelectric material and, specifically, to a thermoelectric material capable of improving the figure of merit and a preparation method therefor. In the present invention, the thermoelectric material may comprise: a matrix compound having a composition of chemical formula 1 or 2; and particles having a composition of chemical formula 3 dispersed in the matrix compound. (AB.sub.2).sub.x(Bi.sub.2Se.sub.2.7Te.sub.0.3).sub.1-x, (CB).sub.x(Bi.sub.2Se.sub.2.7Te.sub.0.3).sub.1-x, D.sub.yE.sub.z.

The present description includes a flexible sensor including a flexible substrate, a thermoelectric substrate formed on the flexible substrate, a first metal electrode that is formed on the flexible substrate and is connected to one end of the thermoelectric body, and a second metal electrode that is formed on the flexible substrate and is connected to another end of the thermoelectric body but spaced apart from the first metal electrode. The flexible sensor simply measures the temperature and the flow velocity with high accuracy. The change in temperature and flow velocity may be measured in real time. In addition, the flexible sensor may measure the temperature and the flow velocity of a fluid even when attached to a curved surface, and self-development is possible by the measurement.

A thermoelectric material may be composed of an isostructural pair of Heusler compounds, either a pair of full Heusler (FH) X.sub.2YZ compounds or a pair of half Heusler (HH) XYZ compounds. In the FH pair, a first compound of the pair may the formula (X1).sub.2Y1Z1, wherein X1 is selected from Fe and Co; Y1 is selected from Ti, V, Nb, Hf, and Ta; and Z1 is selected from Al, Ga, Si, and Sn and a second compound of the pair has the formula (X2).sub.2Y2Z2, wherein X2 is selected from Mn, Fe, Co, Ru, and Rh; Y2 is selected from Ti, V, Mn, Zr, Nb, Hf, and Ta; and Z2 is selected from Be, Al, Ga, Si, Ge and Sn. The first and second compounds of the pair may share two elements in common and have third elements which are different and are either isovalent or have a valency which differs by ±1. In the HH pair, a first compound of the pair may have the formula X1Y1Z1 wherein X1 is selected from Ni and Fe; Y1 is selected from Ti, V, and Nb; and Z1 is selected from Sn and Sb and a second compound of the pair has the formula X2Y2Z2 wherein X2 is selected from Fe, Ru and Pt; Y2 is selected from Ti, V, and Nb; and Z2 is selected from Sn and Sb. The first and second compounds of the pair may share two elements in common and have third elements which are different and are either isovalent or have a valency which differs by ±1. The thermoelectric material at room temperature may have a nanostructured two-phase form having a matrix phase composed of the first compound of the FH pair or the first compound of the HH pair and a nanostructured phase composed of the second compound of the FH pair or the second compound of the HH pair, respectively.

A thermoelectric conversion material has a composition represented by the chemical formula Li.sub.3-aBi.sub.1-bSn.sub.b, in which the range of values a and b is: 0≤a<0.0003, and −a+0.0003≤b≤0.016; or 0.0003≤a≤0.085, and 0<b≤exp[−0.079×(ln(a)).sup.2−1.43×ln(a)−10.5], and in which the thermoelectric conversion material has a BiF.sub.3-type crystal structure and has a p-type polarity.

A thermoelectric material which minimize the content of components that degrade thermoelectric performance and thus can be usefully used in thermoelectric devices including the same.

A thermoelectric material which minimize the content of components that degrade thermoelectric performance and thus can be usefully used in thermoelectric devices including the same.

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.

A thermoelectric device is disclosed. The thermoelectric device comprises: a body part comprising a hollow in which a semiconductor device is disposed; a plurality of connecting parts protruding on the lateral sides of the body part and comprising connecting holes; and a plurality of electrode parts connected to the semiconductor device and extending to the connecting holes of the connecting parts.

The present invention provides a thermoelectric material excellent in heat resistance with less degradation of thermoelectric characteristics even in a high temperature environment. The thermoelectric material comprises a compound represented by a chemical formula Mg.sub.2Si.sub.1−xSn.sub.x(0<x<1) wherein at least one of the Si site and the Sn site of the compound is replaced with at least one of Sb and Bi, and an added Fe.