A method for manufacturing a semiconductor device is provided. The method includes the following operations: (i) forming a transistor having a source, a drain and a gate on a semiconductor substrate; (ii) forming a conductive contact located on and in contact with at least one of the source and the drain; and (iii) forming a capacitor having a first electrode and a second electrode on the semiconductor substrate, in which at least one of the first and second electrodes is formed using front-end-of line (FEOL) processes or middle-end-of line (MEOL) processes.

In order to realize an SJ-MOSFET and an IGBT on a single chip and realize a new arrangement configuration for an SJ-MOSFET section and an IGBT section in a single semiconductor chip, provided is a semiconductor device including a semiconductor substrate; two or more super-junction transistor regions provided on the semiconductor substrate; and one or more IGBT regions that are provided in regions sandwiched by the two or more super-junction transistor regions, in a cross section obtained by cleaving along a pane perpendicular to the semiconductor substrate.

A semiconductor device includes: an IGBT section including a vertical IGBT; and a diode section arranged along the IGBT section and including a diode. The diode section includes a hole injection reduction layer having a first conductivity type and arranged in an upper layer portion of a drift layer, extending to a depth deeper than an anode region constituted by a second conductivity type region in the diode section, having an impurity concentration lower than an impurity concentration of the anode region and higher than an impurity concentration of the drift layer.

Provided is a semiconductor device, including: a trench portion which is provided in an upper surface side of a semiconductor substrate, a cathode region of a first conductivity type or a collect region of a second conductivity type which is provided in a lower surface side of the semiconductor substrate, a buffer region of the first conductivity type which is provided between a lower end of the trench portion and the cathode region or the collect region, and has a first peak, a second peak, a third peak and a fourth peak higher than a bulk donor concentration of the semiconductor substrate in a doping concentration distribution in a depth direction.

A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.

A semiconductor device including a drift region and a buffer region is provided. The drift region of a first conductivity type is provided in a semiconductor substrate. The buffer region of the first conductivity type includes at least six peaks in a doping concentration distribution in a depth direction of the semiconductor substrate. A curve connecting the at least six peaks includes an upwardly-convex portion.

Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.

A semiconductor device includes: a first semiconductor substrate of n-type; a high-side circuit including a first well region of p-type provided on a top surface side of the first semiconductor substrate; and a bootstrap diode including an anode region of p-type provided on the top surface side of the first semiconductor substrate separately from the first well region.

A semiconductor device is preferably excellent in characteristics such as a loss characteristic. Provided is a semiconductor device including a semiconductor substrate, including an upper-surface electrode provided on an upper surface of the semiconductor substrate; an lower-surface electrode provided on a lower surface of the semiconductor substrate; a transistor portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; a first diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; and a second diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode, wherein the first diode portion and the second diode portion have different resistivities in a depth direction of the semiconductor substrate.

The disclosure provides dyes for marking hydrocarbon compositions. More particularly, the disclosure relates to non-mutagenic dyes for marking hydrocarbon compositions.