Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.

A device and method of making an amorphous-silicon/inorganic thin film tandem solar cell including the steps of depositing a textured oxide buffer layer on an amorphous substrate, depositing a crystalline inorganic semiconductor film from a eutectic alloy on the buffer layer, and depositing an amorphous film on the crystalline inorganic film, the amorphous film forming a p-n junction with the crystalline inorganic semiconductor for a solar cell device.

A solar cell having a P-type silicon substrate where one main surface is a light-receiving surface and another is a backside, a plurality of back surface electrodes formed on a part of the backside, an N-type layer in at least a part of the light-receiving surface, and contact areas in which the substrate contacts the electrodes. The P-type silicon substrate is a silicon substrate doped with gallium and has a resistivity of 2.5 .Math.cm or less; and a back surface electrode pitch P.sub.rm [mm] of contact areas in which the P-type silicon substrate is in contact with the back surface electrodes and the resistivity R.sub.sub [.Math.cm] of the substrate satisfy the relation represented by the following formula (1).
log(R.sub.sub)log(P.sub.rm)+1.0(1)

A method for treating a photovoltaic module, the method including in succession a first procedure of exposing at least one photovoltaic cell of the photovoltaic module to electromagnetic radiation, during which the temperature of the photovoltaic cell increases until reaching a temperature, referred to as performance enhancement temperature, that is greater than or equal to 100 C.; a second procedure of exposing the photovoltaic cell to electromagnetic radiation, during which the temperature of the photovoltaic cell is maintained between T.sub.s5 C. and T.sub.s+5 C., where T.sub.s is the performance enhancement temperature, the second exposure procedure having a duration greater than or equal to 5 s; and a procedure of cooling the photovoltaic cell until a temperature of less than 100 C. is reached.