An object may include at least one microtransponder (MTP) configured with an identifier. The identifier of the MTP may be indexed to the object. Indexing information associated with the MTP and the object may be stored in a database of a security system. The MTP may be read, and data reported by the MTP may be processed to determine authenticity of the object.

An object may include at least one microtransponder (MTP) configured with an identifier. The identifier of the MTP may be indexed to the object. Indexing information associated with the MTP and the object may be stored in a database of a security system. The MTP may be read, and data reported by the MTP may be processed to determine authenticity of the object.

An imaging device including a photoelectric convertor that includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which a rate of change of the photoelectric conversion efficiency of the photoelectric convertor with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a first voltage is applied to the first electrode or the second electrode so that a bias voltage between the first electrode and the second electrode exists in the first voltage range.

An imaging device including a photoelectric convertor that includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which a rate of change of the photoelectric conversion efficiency of the photoelectric convertor with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a first voltage is applied to the first electrode or the second electrode so that a bias voltage between the first electrode and the second electrode exists in the first voltage range.

Provided are a solar cell, a method for preparing a solar cell, a tandem solar cell, and a photovoltaic module. The solar cell includes a substrate, a doped conductive layer, and a dielectric layer. The substrate has a first surface, where the first surface includes electrode regions and non-electrode regions that are alternatingly arranged along a first direction. The doped conductive layer is formed over the first surface of the substrate. The doped conductive layer includes first conductive portions and at least one second conductive portion. Each respective first conductive portion of the first conductive portions is formed over a respective electrode region of the electrode regions, and each respective second conductive portion of the at least one second conductive portion is formed over a part of a non-electrode region of the non-electrode regions. The dielectric layer is between the first surface and the doped conductive layer.

An object may include at least one microtransponder (MTP) configured with an identifier. The identifier of the MTP may be indexed to the object. Indexing information associated with the MTP and the object may be stored in a database of a security system. The MTP may be read, and data reported by the MTP may be processed to determine authenticity of the object.

An object may include at least one microtransponder (MTP) configured with an identifier. The identifier of the MTP may be indexed to the object. Indexing information associated with the MTP and the object may be stored in a database of a security system. The MTP may be read, and data reported by the MTP may be processed to determine authenticity of the object.

An electrical connection is formed between first and second conductive elements, by inserting a nano-metal material between the first and second conductive elements; and heating the nano-metal material to a melting temperature to form the electrical connection between the first and second conductive elements. The nano-metal material may comprise a nano-metal paste or ink comprised of one or more of Gold (Au), Copper (Cu), Silver (Ag), and/or Aluminum (Al) nano-particles that melt or fuse into a solid to form the electrical connection, at a melting temperature of about 150-250 degrees C., and more preferably, about 175-225 degrees C. The electrical connection may be formed between a solar cell and a substrate by creating a via in the solar cell between a front and back side of the solar cell, wherein the via is connected to a contact on the front side of the solar cell and a trace on the substrate.

An electrical connection is formed between first and second conductive elements, by inserting a nano-metal material between the first and second conductive elements; and heating the nano-metal material to a melting temperature to form the electrical connection between the first and second conductive elements. The nano-metal material may comprise a nano-metal paste or ink comprised of one or more of Gold (Au), Copper (Cu), Silver (Ag), and/or Aluminum (Al) nano-particles that melt or fuse into a solid to form the electrical connection, at a melting temperature of about 150-250 degrees C., and more preferably, about 175-225 degrees C. The electrical connection may be formed between a solar cell and a substrate by creating a via in the solar cell between a front and back side of the solar cell, wherein the via is connected to a contact on the front side of the solar cell and a trace on the substrate.

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.