The present disclosure discloses a preparation method for a solar cell and a solar cell. The preparation method for a solar cell comprises: locally forming a tunnel silicon oxide layer and an N-type doped polysilicon layer on a front surface of a P-type silicon substrate, wherein the N-type doped polysilicon layer is stacked on the tunnel silicon oxide layer; immersing the P-type silicon substrate having the tunnel silicon oxide layer and the N-type doped polysilicon layer locally formed on the front surface into an electroplating solution, irradiating the front surface of the P-type silicon substrate with light for a set duration so as to grow a front metal electrode on the N-type doped polysilicon layer, and removing a metal remaining on the front surface of the P-type silicon substrate by etching, wherein the width of the front metal electrode is the same as the width of the N-type doped polysilicon layer. The preparation method may omit an alignment operation in a metal electrode preparation process, thereby effectively reducing a difficulty in a preparation process of a local passivated contact emitter.

A solar cell and a manufacturing method thereof, and a photovoltaic system. The solar cell includes: a substrate layer including a first surface and a second surface arranged oppositely along a thickness direction thereof; a tunnel oxide layer, a first doped polysilicon layer, and a first passivation layer sequentially arranged on the first surface of the substrate layer in a direction gradually away from the substrate layer; and a first finger electrode layer, at least one of the first fingers being arranged in first connection holes, bottoms of the first connection holes being located in the first doped polysilicon layer, and the first fingers passing through the first connection holes corresponding thereto to be electrically connected to the first doped polysilicon layer; and in the first direction, widths of the first connection holes being all less than widths of the first fingers corresponding to the first connection holes. While ensuring good electrical connection, the solar cell causes less damage and recombination to a passivation structure of the solar cell, and has high photoelectric conversion efficiency.

This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer (103). The photoactive crystalline material layer (103) includes a penetrating crystal grain (313), where the penetrating crystal grain (313) is a crystal grain penetrating through the photoactive crystalline material layer (103), and a percentage p of a quantity of penetrating crystal grains (313) in a total quantity of crystal grains of the photoactive crystalline material layer (103) is 80%. The photoactive crystalline material layer (103) includes a backlight side (113) and a backlight crystal grain (31, 32, 33), where the backlight crystal grain (31, 32, 33) is a crystal grain exposed to the backlight side (113) and has a backlight crystal face exposed to the backlight side (113). At least one region of the backlight side (113) has an average flatness index R.sub.avg being 75.

This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer (103). The photoactive crystalline material layer (103) includes a penetrating crystal grain (313), where the penetrating crystal grain (313) is a crystal grain penetrating through the photoactive crystalline material layer (103), and a percentage p of a quantity of penetrating crystal grains (313) in a total quantity of crystal grains of the photoactive crystalline material layer (103) is 80%. The photoactive crystalline material layer (103) includes a backlight side (113) and a backlight crystal grain (31, 32, 33), where the backlight crystal grain (31, 32, 33) is a crystal grain exposed to the backlight side (113) and has a backlight crystal face exposed to the backlight side (113). At least one region of the backlight side (113) has an average flatness index R.sub.avg being 75.

An ultrathin silicon oxynitride interface material, a tunnel oxide passivated structure and preparation methods and applications thereof are provided. The ultrathin silicon oxynitride interface material is an SiON film with a thickness of 1 nm to 4 nm, and the percentage content of N atoms is 1% to 40%. Compared with silicon oxide, the diffusion rate of boron in the SiON film of the present disclosure is low, which effectively reduces the damaging effect of boron, improves the integrity of the SiON film and maintains the chemical passivation effect. The SiON film with high nitrogen concentration can noticeably lower the concentration of boron on the silicon surface so as to lessen the boron-induced defects. Furthermore, the SiON film has an energy band structure approximate to silicon nitride, which increases the hole transport efficiency and hole selectivity, and further improves the passivation quality and reduces the contact resistivity.

Embodiments of the present disclosure relate to the photovoltaic field, and provide a solar cell and a photovoltaic module. The solar cell includes a substrate, a tunneling dielectric layer formed on the substrate, a doped conductive layer formed on the tunneling dielectric layer, at least one conductive connection structure, a passivation layer over the doped conductive layer and the at least one conductive connection structure, and a plurality of finger electrodes. The doped conductive layer has a plurality of protrusions arranged along a first direction, and each protrusion extends along a second direction perpendicular to the first direction. The at least one conductive connection structure is formed between two adjacent protrusions and connected with sidewalls of the two adjacent protrusions. Each finger electrode of the plurality of finger electrodes extends along the second direction to penetrate the passivation layer and connect to a respective protrusion.

The present disclosure is applicable to the technical field of solar cells, and provides a passivated contact structure, a solar cell, a module, and a system. The passivated contact structure of a solar cell includes: a silicon substrate; and a first silicon oxide layer, a doped layer, a second silicon dioxide layer and a passivation layer, which are sequentially disposed on the silicon substrate, wherein a local region of the first silicon oxide layer includes a thinned region, and the proportion of a silicon oxide content in the first silicon oxide layer is reduced in the thinned region. Thus, the thinning of the local region of the first silicon oxide layer allows H to quickly pass through, so that a H passivation effect can be effectively improved, and the heat treatment control difficulty is reduced.

The disclosure discloses a solar cell and a preparation method for a solar cell. The preparation method for a solar cell comprises: sequentially forming a tunnel silicon oxide layer, an N-type doped polysilicon layer, and a front metal layer in an entire fashion on a front surface of a P-type silicon substrate; subjecting the entire front metal layer to a photoetching process to form a patterned front fine gate electrode; subjecting the tunnel silicon oxide layer and the N-type doped polysilicon layer in a region not covered by the front fine gate electrode to chemical etching to form a local tunnel silicon oxide layer and a local N-type doped polysilicon layer, wherein the widths of the local tunnel silicon oxide layer and the local N-type doped polysilicon layer are the same as the width of the front fine gate electrode. The preparation method may achieve an automatic and precise alignment of the front fine gate electrode with a local tunnel oxide passivated layer and a local polysilicon layer, thereby effectively reducing a difficulty in a preparation process of a local passivated contact emitter while ensuring the efficiency of the solar cell.

The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.