The present disclosure relates to an infrared photodetector based on a van der waals heterostructure and a preparation method thereof. The infrared photodetector comprises a fully depleted van der waals heterostructure. The fully depleted van der waals heterostructure comprises a first n-type two-dimensional semiconductor layer, a p-type two-dimensional semiconductor layer, and a second n-type two-dimensional semiconductor layer which are sequentially provided from bottom to top. A fully depleted built-in electric field is formed by means of a sandwich structure including the first n-type two-dimensional semiconductor layer, the p-type two-dimensional semiconductor layer and the second n-type two-dimensional semiconductor layer, which can improve the light absorption efficiency while reducing the dark current of a device, and the separation rate and collection efficiency of photo-induced carriers are accelerated.

The present disclosure relates to an infrared photodetector based on a van der waals heterostructure and a preparation method thereof. The infrared photodetector comprises a fully depleted van der waals heterostructure. The fully depleted van der waals heterostructure comprises a first n-type two-dimensional semiconductor layer, a p-type two-dimensional semiconductor layer, and a second n-type two-dimensional semiconductor layer which are sequentially provided from bottom to top. A fully depleted built-in electric field is formed by means of a sandwich structure including the first n-type two-dimensional semiconductor layer, the p-type two-dimensional semiconductor layer and the second n-type two-dimensional semiconductor layer, which can improve the light absorption efficiency while reducing the dark current of a device, and the separation rate and collection efficiency of photo-induced carriers are accelerated.

A double photodiode electromagnetic radiation sensor device including a substrate, a first integrated photodiode (PD1), a second integrated photodiode (PD2), and more than one metal contact. The substrate may be within a first semiconductor material that defines a first face and a second face. The PD1 may include a first doped region extending to the second face and a n- type doping. The PD1 may further include a second doped region extending to the second face having a p+ type doping. The PD2 may include the first doped region, and a layer in a second semiconductor material placed on the second face in contact with the first doped region defining a third face. The PD2 may yet further include a doped layer in the second semiconductor material having a p+ type doping and overlapping the third face.

A double photodiode electromagnetic radiation sensor device including a substrate, a first integrated photodiode (PD1), a second integrated photodiode (PD2), and more than one metal contact. The substrate may be within a first semiconductor material that defines a first face and a second face. The PD1 may include a first doped region extending to the second face and a n- type doping. The PD1 may further include a second doped region extending to the second face having a p+ type doping. The PD2 may include the first doped region, and a layer in a second semiconductor material placed on the second face in contact with the first doped region defining a third face. The PD2 may yet further include a doped layer in the second semiconductor material having a p+ type doping and overlapping the third face.

A semiconductor bipolar phototransistor (PT) comprises a floating base consisting of a base (b) electrically coupled only to (i) an emitter (e) via an emitter junction (ej); and (ii) a collector (c) via a collector junction (cj) conductively, capacitively or inductively. A substantially planar semiconductor interface is formed between the semiconductor and a dielectric. A semiconductor volume of highest bandgap (Eg) whose bandgap is higher than the bandgap of the remaining semiconductor volume of the semiconductor bipolar phototransistor (PT) within about 1 micron linear distance from the substantially planar semiconductor interface with the dielectric. The emitter junction (ej) comprises an emitter junction (ej) portion with a bandgap lower than the bandgap of the highest bandgap volume. The base (b) comprises a base (b) portion with a bandgap lower than the bandgap of the highest bandgap volume. The collector junction (cj) comprises a collector junction (cj) portion with a bandgap lower than the bandgap of the highest bandgap volume. A first low-doped region of the highest bandgap volume resides within the emitter junction (ej). A second low-doped region of the highest bandgap volume resides within the base (b). A third low-doped region of the highest bandgap volume resides within the collector junction (cj). A minimum linear dimension of the highest bandgap volume is at least 10 nanometers. The highest bandgap volume is substantially single crystalline. The first, second, and third low-doped regions of the highest bandgap volume are not doped to higher than 10.sup.16/cm.sup.3.

The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.

A phototransistor is provided. The phototransistor includes a substrate, a light-receiving area, an emitter active area and an emitter electrode. The light-receiving area is disposed in the substrate. The emitter active area is disposed in a central area of the light-receiving area to maximize a distance between a contour edge of the emitter active area and that of the light-receiving area. The emitter electrode is electrically connected to the emitter active area.

A current-assisted photonic demodulator includes a detection portion having two doped modulation regions and two doped collection regions, lying flush with a first face covered by a dielectric layer. Electrodes pass through the dielectric layer and come into contact with the doped regions. In addition, intermediate electrodes partly pass through the dielectric layer and are spaced apart from the first face by a non-zero distance, each being located, in projection in a main plane, between one of the doped modulation regions and the adjacent doped collection region.

A current-assisted photonic demodulator includes a detection portion having two doped modulation regions and two doped collection regions, lying flush with a first face covered by a dielectric layer. Electrodes pass through the dielectric layer and come into contact with the doped regions. In addition, intermediate electrodes partly pass through the dielectric layer and are spaced apart from the first face by a non-zero distance, each being located, in projection in a main plane, between one of the doped modulation regions and the adjacent doped collection region.

A photodetector including a high electron mobility transistor (HEMT) device or an indium phosphide (InP)-based heterojunction bipolar transistor (HBT) device including a collector layer, a base layer formed on the collector layer and an emitter layer formed on the base layer. The photodetector also includes a nanowire array electrically coupled to the HEMT device or the base layer of the HBT device, and may include a first sub-array positioned on one side of the emitter layer and second sub-array positioned on an opposite side of the emitter layer. The nanowire array includes a plurality of spaced apart and conical-shaped InP nanowires encased in a transparent medium, and are operable to absorb light over a wavelength band of 400-925 nm and convert the light to an electrical signal that is received by the HEMT or HBT device.