A method for fabricating a complementary bipolar junction transistor (BJT) integrated structure. The method includes forming a first backplate in a monolithic substrate below a first buried oxide (BOX) layer. Another forming step forms a second backplate in the monolithic substrate below the first BOX layer. The second backplate is electrically isolated from the first backplate. Another forming step forms an NPN lateral BJT above the first BOX layer and superposing the first backplate. The NPN lateral BJT is configured to conduct electricity horizontally between an NPN emitter and an NPN collector when the NPN lateral BJT is active. Another forming step forms a PNP lateral BJT superposing the second backplate. The PNP lateral BJT is configured to conduct electricity horizontally between a PNP emitter and a PNP collector when the PNP lateral BJT is active.

A lateral bipolar junction transistor (BJT) magnetic field sensor that includes a layout of two or more adjacent lateral BJT devices. Each BJT includes a semiconductor base region of a first conductivity type doping, a semiconductor emitter region of a second conductivity type doping and laterally contacting the base region; and a first semiconductor collector region of a second conductivity type doping contacting said base region on an opposite side thereof. A second collector region of the second conductivity type doping is also formed contacting the base region on the opposite side thereof in spaced apart relation with the first collector region. The first adjacent lateral BJT device includes the emitter, base and first collector region and the second adjacent lateral BJT device includes the emitter, base and second collector region. The sensor induces a detectable difference in collector current amounts in the presence of an external magnetic field transverse to a plane defined by the layout.

Bipolar junction transistors including inorganic channels and organic emitter junctions are used in some applications for forming high resolution active matrix displays. Arrays of such bipolar junction transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.

A process for making a transistor that includes removing a sacrificial material under a base layer that includes dopants for an intrinsic base of a transistor. After the removal of the sacrificial layer to form a cavity directly under the base layer, a semiconductor material is formed in the cavity. The semiconductor layer includes dopants for a current electrode of the transistor that is located directly under the intrinsic base of the transistor.

The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a band-gap reference circuit, virtual ground reference circuit and double band-gap reference circuit with the bipolar transistor. The bipolar transistor includes: a Silicon-On-Insulator wafer; a base area, an emitter area and a collector area; a base area gate dielectric layer on a top silicon layer and atop the base area; a base area control-gate on the base area gate dielectric layer; an emitter electrode connected to the emitter area via a first contact; a collector electrode connected to the collector area via a second contact; and a base area control-gate electrode connected to the base area control-gate via a third contact. Processes of forming the bipolar transistor are fully compatible with traditional standard CMOS processes; and the base current to turn on the bipolar transistor is based on the GIDL current and formed by applying a voltage to the base area control-gate electrode without any need of contact to the base.

A complementary bipolar junction transistor (BJT) integrated structure and methods for fabricating and operating such. The structure includes a monolithic substrate and conductive first and second backplates electrically isolated from each other. An NPN lateral BJT is superposed over the first backplate, and a PNP lateral BJT is superposed over the second backplate. A buried oxide (BOX) layer is positioned between the NPN lateral BJT and the first backplate, and between the PNP lateral BJT and the second backplate.

Described herein are various amorphous metal thin film transistors. Embodiments of such transistors include an amorphous metal gate electrode and a channel conductor formed on a non-conducting substrate. Further embodiments of such transistors include an amorphous metal source electrode, an amorphous metal drain electrode, and a channel conductor formed on a non-conducting substrate. Methods of forming such transistors are also described.

Proposed is a power semiconductor device and, more particularly, to a power semiconductor device that prevents a decrease in total current amount due to an increase in the length of a current movement path by ensuring that a P-TOP region formed in a resistance unit is spaced apart from a field oxide film thereabove, thereby forming a current path between the P-TOP region and the field oxide film.

A compound transistor comprises a first transistor structure and a second transistor structure. The first transistor structure includes a collector layer, a base layer on the collector layer, an emitter layer on a first portion of the base layer, and a base metal contact on a second portion of the base layer. The second transistor structure includes a channel layer directly on a first portion of the emitter layer and a barrier layer on the channel layer. A plurality of electrodes including a source, a gate, and a drain are formed on the barrier layer such that the source is electrically coupled to the base metal contact.

Described herein are various amorphous metal thin film transistors. Embodiments of such transistors include an amorphous metal gate electrode and a channel conductor formed on a non-conducting substrate. Further embodiments of such transistors include an amorphous metal source electrode, an amorphous metal drain electrode, and a channel conductor formed on a non-conducting substrate. Methods of forming such transistors are also described.