A photonic integrated apparatus is provided. The photonic integrated apparatus includes a first semiconductor layer including silicon, a second semiconductor layer including germanium, provided on the first semiconductor layer, and configured to generate a photocurrent based on light incident onto the first semiconductor layer, a conductive layer having a Schottky junction structure with the second semiconductor layer, and a tunneling barrier layer between the second semiconductor layer and the conductive layer.

A photonic integrated apparatus is provided. The photonic integrated apparatus includes a first semiconductor layer including silicon, a second semiconductor layer including germanium, provided on the first semiconductor layer, and configured to generate a photocurrent based on light incident onto the first semiconductor layer, a conductive layer having a Schottky junction structure with the second semiconductor layer, and a tunneling barrier layer between the second semiconductor layer and the conductive layer.