Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

An energy harvesting device is provided. The device includes a patterned graphene sheet arranged on a substrate, wherein the graphene sheet contains channels; a perovskite composition arranged on the graphene sheet, wherein the perovskite composition conforms to the channels of the graphene sheet; and a luminescent material composition or a 2D material composition arranged on the perovskite composition. The device is configured to convert electromagnetic radiation and/or thermal energy to an electrical signal.

Disclosed are a solar cell and a solar cell module comprising same, the solar cell comprising: a solar cell structure having one or more hollows passing therethrough in the height direction, and a plurality of light-concentrating parts disposed in each of the one or more hollows.

Structures for a quantum sensor and methods of forming such structures. The structure comprises a first waveguide core, a second waveguide core, and a sensor layer laterally between the first waveguide core and the second waveguide core. The first waveguide core is laterally coupled to the sensor layer, the second waveguide core is laterally coupled to the sensor layer, and the sensor layer comprises a material including a plurality of defect centers capable of photoluminescence.

A photovoltaic system comprises a photovoltaic cell, a substrate, and a light-conversion layer. The photovoltaic cell converts incident light into electricity and is responsive to a range of frequencies of incident light that is less than all frequencies of the incident light. The substrate is disposed between the photovoltaic cell and the incident light so that the incident light passes through the substrate to illuminate the photovoltaic cell. The light-conversion layer is disposed on the substrate so that incident light illuminates the light-conversion layer and the light-conversion layer converts a broad frequency band of incident light outside the range to light within the range and is emitted toward the photovoltaic cell to illuminate the photovoltaic cell with converted light.

Devices, systems and methods for operating and using an optically quenchable carbon-doped gallium nitride photoconductive semiconductor switch (PCSS) are described. An example method includes illuminating a carbon-doped gallium nitride material of the photoconductive semiconductor switch with a first laser light within a first range of wavelengths to trigger the photoconductive semiconductor switch to a conductive state, turning off or blocking the first laser light, and illuminating the carbon-doped gallium nitride material with a second laser light within a second range of wavelengths to trigger the photoconductive semiconductor switch to an insulating state. In this example, the first range of wavelengths comprises an ultraviolet (UV) or a blue wavelength range, the second range of wavelengths comprises an infrared (IR) or a red wavelength range, and switching from the conductive state to the insulating state occurs within a sub-nanosecond range.

Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.