A quantum mechanical circuit includes a substrate; a first electrical conductor and a second electrical conductor provided on the substrate and spaced apart to provide a gap therebetween; and a third electrical conductor to electrically connect the first electrical conductor and the second electrical conductor. The third electrical conductor is a poor thermal conductor.

A quantum Hall resistance apparatus is to improve resistance standards and includes a substrate, a graphene epitaxially grown on the substrate and having a plurality of first contact patterns at edges of the graphene, a plurality of contacts, each including a second contact pattern and configured to connect to a corresponding first contact pattern, and a protective layer configured to protect the graphene and to increase adherence between the first contact patterns and the second contact patterns. The contacts become a superconductor at a temperature lower than or equal to a predetermined temperature and under up to a predetermined magnetic flux density.

Qubit circuits having components formed deep in a substrate are described. The qubit circuits can be manufactured using existing integrated-circuit technologies. By forming components such as superconducting current loops, inductive, and/or capacitive components deep in the substrate, the footprint of the qubit circuit integrated within the substrate can be reduced. Additionally, coupling efficiency to and from the qubit can be improved and losses in the qubit circuit may be reduced.

An aspect includes one or more board layers. A first chip cavity is formed within the one or more board layers, wherein a first Josephson amplifier or Josephson mixer is disposed within the first chip cavity. The first Josephson amplifier or Josephson mixer comprises at least one port, each port connected to at least one connector disposed on at least one of the one or more board layers, wherein at least one of the one or more board layers comprises a circuit trace formed on the at least one of the one or more board layers.

A flux-biasing device includes a set of magnetic flux generating members. A first magnetic flux generating member is configured to magnetically interact with a first qubit from a set of qubits of a quantum processor such that a first magnetic flux of the first member causes a first change in a first resonance frequency of the first qubit by a first frequency shift value. Each non-corresponding magnetic flux generating member of the set is well separated from qubits corresponding to other magnetic flux generating members of the set such that qubits corresponding to other members exhibit less than a threshold value of resonance frequency shift as a result of a magnetic flux of a non-corresponding member.

In an embodiment, a quantum device includes a first set of protrusions formed on a substrate and a second set of protrusions formed on a qubit chip. In the embodiment, the quantum device includes a set of bumps formed on an interposer, the set of bumps formed of a material having above a threshold ductility at a room temperature range, wherein a first subset of the set of bumps is configured to cold weld to the first set of protrusions and a second subset of the set of bumps is configured to cold weld to the second set of protrusions.

Devices, systems, methods, and computer-implemented methods to facilitate employing thermalizing materials in an enclosure for quantum computing devices are provided. According to an embodiment, a system can comprise a quantum computing device and an enclosure having the quantum computing device disposed within the enclosure. The system can further comprise a thermalizing material disposed within the enclosure, with the thermalizing material being adapted to thermally link a cryogenic device to the quantum computing device.

An integrated circuit is provided that comprises a first substrate having a plurality of conductive contact pads spaced apart from one another on a surface of the first substrate, a dielectric layer overlying the first substrate and the plurality of conductive contact pads, and a second substrate overlying the dielectric layer. A plurality of superconducting contacts extend through the second substrate and the dielectric layer to the first substrate, wherein each superconducting contact of the plurality of superconducting contacts is aligned with and in contact with a respective conductive contact pad of the plurality of conductive contact pads.

This disclosure includes a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. In some examples, a method for fabricating an air bridge includes forming an air bridge brace structure on a substrate, and forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure. The air bridge material layer with the one or more openings is formed based on a patterned photoresist layer with patterns corresponding to the one or more openings. The method further includes removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings.

A system includes a quantum processor includes a plurality of qubits. For each qubit, there is a circulator operative to receive a control signal and an output signal from the qubit. An isolator is coupled to an output of the circulator. A quantum-limited amplifier is coupled to an output of the isolator and configured to provide an output of the qubit. A multiplexor (MUX) is configured to frequency multiplex the outputs of at least two of the plurality of qubits as a single output of the quantum processor.