Systems and methods of non-epitaxial high Schottky barriers heterojunction solar cells are described. The high Schottky barriers heterojunction solar cells are formed using non-epitaxial methods to reduce fabrication costs and improve scalability.

An optoelectronic device includes a thin film of a transition-metal dichalcogenide, a first electrode made of a first metal directly contacting the thin film, and a second electrode made of a second metal directly contacting the thin film. The first metal is molybdenum, titanium, aluminum, tantalum, scandium, or yttrium. The second metal is platinum, nickel, palladium, gold, or cobalt. Depending on the type and doping of the transition-metal dichalcogenide, one of the first and second metals forms an electron selective layer with the transition-metal dichalcogenide and the other of the first and second metals forms a hole selective layer with the transition-metal dichalcogenide. The thin film may be a monolayer or multilayer. The transition-metal dichalcogenide may be molybdenum disulfide. The thin film may be grown via chemical vapor deposition and have an area of 0.25 cm.sup.2 or more.

An optoelectronic device includes a thin film of a transition-metal dichalcogenide, a first electrode made of a first metal directly contacting the thin film, and a second electrode made of a second metal directly contacting the thin film. The first metal is molybdenum, titanium, aluminum, tantalum, scandium, or yttrium. The second metal is platinum, nickel, palladium, gold, or cobalt. Depending on the type and doping of the transition-metal dichalcogenide, one of the first and second metals forms an electron selective layer with the transition-metal dichalcogenide and the other of the first and second metals forms a hole selective layer with the transition-metal dichalcogenide. The thin film may be a monolayer or multilayer. The transition-metal dichalcogenide may be molybdenum disulfide. The thin film may be grown via chemical vapor deposition and have an area of 0.25 cm.sup.2 or more.

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P and NSi beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P and NSi beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.