A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

A system includes a focal planar array having multiple pixels. Each of at least some of the pixels includes a semiconductor substrate and a pixel formed in or over the semiconductor substrate, where the pixel includes a first implant having a first doping concentration and a second implant within the first implant. The second implant has a different width and/or depth than the first implant and a second doping concentration higher than the first doping concentration.