Provided is a semiconductor device for radio frequency switch that includes an SOI substrate and a gate electrode. The SOI substrate includes a buried oxide film and a semiconductor layer on a carrier substrate. The gate electrode is provided on the semiconductor layer. The semiconductor layer includes a first area below the gate electrode and a second area other than the first area. A third area is provided in at least part of the second area. A fourth area is provided in at least part of the first area. The fourth area has a different thickness from a thickness of the third area.

An LDFET is disclosed. A source region is electrically coupled to a source contact. A lightly doped drain (LDD) region has a lower dopant concentration than the source region, and is separated from the source region by a channel. A highly doped drain region forms an electrically conductive path between a drain contact and the LDD region. A gate electrode is located above the channel and separated from the channel by a gate dielectric. A shield plate is located above the gate electrode and the LDD region, and is separated from the LDD region, the gate electrode, and the source contact by a dielectric layer. A control circuit applies a variable voltage to the shield plate that: (1) accumulates a top layer of the LDD region before the transistor is switched on; and (2) depletes the top layer of the LDD region before the transistor is switched off.

The present invention provides an image pickup device that recognizes the object that the user is attempting to capture as the subject, tracks the movement of that subject, and can continue tracking the movement of the subject even when the subject leaves the capturing area so that the subject can always be reliably brought into focus. The image pickup device includes a main camera that captures the subject; an EVF that displays the captured image captured by the main camera, a sub-camera that captures the subject using a wider capturing region than the main camera, and a processing unit that extracts the subject from the captured images captured by the main camera and the sub-camera, tracks the extracted subject, and brings the subject into focus when an image of the subject is actually captured. When the subject moves outside of a capturing region of the main camera, the processing unit tracks the subject extracted from the captured image captured by the sub-camera.

A semiconductor device is disclosed. The semiconductor device comprising: a semiconductor substrate having first type conductivity and including an active region and a device isolation film, a doping layer having second type conductivity and buried in a bottom part of the semiconductor substrate of the active region, a recess formed in the semiconductor substrate, a gate electrode provided in the recess.

The present invention provides an image pickup device that recognizes the object that the user is attempting to capture as the subject, tracks the movement of that subject, and can continue tracking the movement of the subject even when the subject leaves the capturing area so that the subject can always be reliably brought into focus. The image pickup device includes a main camera that captures the subject; an EVF that displays the captured image captured by the main camera, a sub-camera that captures the subject using a wider capturing region than the main camera, and a processing unit that extracts the subject from the captured images captured by the main camera and the sub-camera, tracks the extracted subject, and brings the subject into focus when an image of the subject is actually captured. When the subject moves outside of a capturing region of the main camera, the processing unit tracks the subject extracted from the captured image captured by the sub-camera.

A semiconductor device includes: a field plate electrode formed in an inner portion of a trench through a first insulating film, the trench being formed in a semiconductor substrate; and a gate electrode formed over the field plate electrode through a second insulating film. The first insulating film includes a stacked film made of a first oxide film in contact with the semiconductor substrate and a second oxide film in contact with the field plate electrode, and an inclination of an upper surface of the first insulating film changes at a boundary between the first oxide film and the second oxide film.

A method is provided for etching a dielectric layer covering a top and a flank of a three-dimensional structure, the method including: a first etching of the dielectric layer, including: a first fluorine-based compound and oxygen, the first etching being performed to: form a first protective layer on the top and form a second protective layer on the dielectric layer, a second etching configured to remove the second protective layer while retaining a portion of the first protective layer, the first and the second etchings being repeated until removing the dielectric layer located on the flank of the structure, and before deposition of the dielectric layer, a formation of an intermediate protective layer between the top and the dielectric layer.

A semiconductor device of the present invention includes a gate electrode buried in a gate trench of a first conductivity-type semiconductor layer, a first conductivity-type source region, a second conductivity-type channel region, and a first conductivity-type drain region formed in the semiconductor layer, a second trench selectively formed in a source portion defined in a manner containing the source region in the surface of the semiconductor layer, a trench buried portion buried in the second trench, a second conductivity-type channel contact region selectively disposed at a position higher than that of a bottom portion of the second trench in the source portion, and electrically connected with the channel region, and a surface metal layer disposed on the source portion, and electrically connected to the source region and the channel contact region.

A semiconductor device includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a gate electrode and a second electrode. The gate electrode has a first region opposite to the second semiconductor region and a second region opposite to the third semiconductor region. The gate electrode has a first length from a lower surface to an upper surface of the second region and a second length from the lower surface to an upper surface of the first region, and the first length is greater than the second length.

A semiconductor device including a gate structure including a gate electrode which is formed over a substrate and includes a metal whose volume is increased when solidified, and a gate spacer formed on both sides of the gate structure. The performance of semiconductor devices is improved by applying a metal material to form the gate electrode whose volume increases when solidified and thereby applies a tensile stress to a channel.