The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

A heterojunction solar cell and a manufacturing method thereof are provided. The manufacturing method includes the following steps: A: forming a tunnel oxide layer on a surface of a semiconductor substrate; B: forming an N-type polysilicon layer on the tunnel oxide layer; C: forming a mask layer on the N-type polysilicon layer of a first main surface of the semiconductor substrate; D: performing texturing and cleaning on a second main surface of the semiconductor substrate, and removing the mask layer; E: forming a second intrinsic amorphous silicon layer on the second main surface of the semiconductor substrate; and F: forming a P-type oxygen-doped microcrystalline silicon layer on the second intrinsic amorphous silicon layer.

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

Disclosed are a semiconductor substrate and a treating method thereof, a solar cell and a preparation method thereof. The method for treating a semiconductor substrate includes forming a smooth surface area and a textured surface area adjacent to the smooth surface area on at least one side of the semiconductor substrate. The area of the smooth surface area is greater than or equal to that of the textured surface area. A smooth surface area and a textured surface area adjacent to the smooth surface area are formed on at least one side of the semiconductor substrate, so that the transparent conductive film is located and only located on the smooth surface area. A grid line is formed on the side of the corresponding to the transparent conductive film facing away from the semiconductor substrate, thereby improving the photovoltaic conversion efficiency of the solar cell.

A back contact solar cell includes a semiconductor substrate, a first functional layer, a second functional layer, a laser protection layer, a first electrode structure, and a second electrode structure. The semiconductor substrate has a light-receiving surface and a shady surface. The first functional layer is formed in the first polarity region. The second functional layer is formed in the second polarity region. The laser protection layer is formed on a side of the second functional layer away from the semiconductor substrate and exposes an electrode contact region of the second functional layer. The laser protection layer includes laser absorption material. The first electrode structure is formed on a side of the first functional layer away from the semiconductor substrate. The second electrode structure is formed on a side of the second functional layer away from the semiconductor substrate, and the second electrode structure is in the electrode contact region.

The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

A solar cell includes a semiconductor substrate, in which a rear surface of the semiconductor substrate having non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 m; a first passivation layer located on a front surface of the semiconductor substrate; first and second tunnel oxide layers located on the non-pyramid-shaped microstructures; first and second doped conductive layers located on a surface of the first and second tunnel oxide layers, the first and second doped conductive layer has different conductive types; a second passivation layer located on a surface of the first and second doped conductive layers; and electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.

The present application discloses a method for manufacturing a solar cell, a solar cell, and a solar cell module. In one example, a method includes: forming an emitter layer on a semiconductor substrate; forming a passivation layer on the emitter layer; forming an insulating layer on the passivation layer; forming busbars on the insulating layer, where the busbars extend in a first direction and are arranged at intervals in a second direction fingers on the insulating layer, where the fingers extend in the second direction and are arranged at intervals in the first direction. The busbars extend toward the emitter layer. A depth of the busbars extending into the passivation layer is no greater than 90% of a thickness of the passivation layer, and a depth of the busbars extending into the insulating layer is greater than 20% of a thickness of the insulating layer.

Disclosed are a semiconductor substrate and a treating method thereof, a solar cell and a preparation method thereof. The method for treating a semiconductor substrate includes forming a smooth surface area and a textured surface area adjacent to the smooth surface area on at least one side of the semiconductor substrate. The area of the smooth surface area is greater than or equal to that of the textured surface area. A smooth surface area and a textured surface area adjacent to the smooth surface area are formed on at least one side of the semiconductor substrate, so that the transparent conductive film is located and only located on the smooth surface area. A grid line is formed on the side of the corresponding to the transparent conductive film facing away from the semiconductor substrate, thereby improving the photovoltaic conversion efficiency of the solar cell.

The present disclosure discloses a solar cell and methods of fabricating a solar cell. In one aspect, a solar cell includes a substrate, a first doped layer arranged on a first surface of the substrate in a first region of the substrate, and a second doped layer arranged on the first surface of the substrate in a second region of the substrate. The first doped layer includes a first dopant. The second doped layer includes a second dopant. A conductivity type of the second doped layer is opposite to a conductivity type of the first doped layer. The solar cell further includes a third doped layer arranged on the first doped layer. The third doped layer includes the first dopant and the second dopant.