A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 10.sup.12 cm.sup.−3 at 300K.

The invention relates to an active material comprising at least one oxygen-containing compound selected from Fe.sub.3O.sub.4 and Fe.sub.2O.sub.3, at least one thickener additive selected from the group consisting of agar agar, xanthan gum, methylcellulose, and arabic gum, and at least one plasticizer additive, wherein the particle size of the at least one oxygen-containing compound has an average diameter in the range from 10 nm to 40 μm. The invention concerns also an electric power generator (EPG) comprising at least a first electrode (11) and a second electrode (12), wherein the electric power generator comprises the active material between said electrodes (11, 12).

A wafer-level integrated thermal detector comprises a first wafer and a second wafer (W1, W2) bonded together. The first wafer (W1) includes a dielectric or semiconducting substrate (100), a dielectric sacrificial layer (102) deposited on the substrate, a support layer (104) deposited on the sacrificial layer or the substrate, a suspended active element (108) provided within an opening (106) in the support layer, a first vacuum-sealed cavity (110) and a second vacuum-sealed cavity (106) on opposite sides of the suspended active element. The first vacuum-sealed cavity (110) extends into the sacrificial layer (102) at the location of the suspended active element (108). The second vacuum-sealed cavity (106) comprises the opening of the support layer (104) closed by the bonded second wafer. The thermal detector further comprises front optics (120) for entrance of radiation from outside into one of the first and second vacuum-sealed cavities, aback reflector (112) arranged to reflect radiation back into the other one of the first and second vacuum-sealed cavities, and electrical connections (114) for connecting the suspended active element to a readout circuit (118).

A semiconductor device comprises a first doped semiconductor layer, a second doped semiconductor layer, an oxide layer covering the first doped semiconductor layer and the second doped semiconductor layer, and an interconnect. The first doped semiconductor layer is electrically connected with the second doped semiconductor layer by means of the interconnect which crosses over a sidewall of the second doped semiconductor layer. The interconnect comprises a metal filled slit in the oxide layer. At least one electronic component is formed in the first and/or second semiconductor layer. The semiconductor device moreover comprises a passivation layer which covers the first and second doped semiconductor layers and the oxide layer.

TTFields are applied using transducer arrays made from a plurality of individual electrode elements. The temperatures of those electrode elements can be normalized by positioning respective regions of pyroelectric material in thermal contact with the electrode elements, and subsequently applying an AC signal to each of the electrode elements at respective duty cycles so that an alternating electric field is induced within the subject. For each of the regions of the pyroelectric material, an electrical characteristic that is related to temperature is measured after the AC signal turns off. The duty cycles of the AC signals that are applied to the electrode elements is adjusted until the measured electrical characteristics indicate that the temperatures of all the regions of the pyroelectric material have equalized to within 1° C.

A semiconductor device capable of retaining a signal sensed by a sensor element is provided. The semiconductor device includes a sensor element, a first transistor, a second transistor, and a third transistor. One electrode of the sensor element is electrically connected to a first gate. The first gate is electrically connected to one of a source and a drain of the third transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor. A semiconductor layer includes a metal oxide.

An antibacterial yarn that includes a core yarn including a functional polymer that generates a charge by external energy and a first sheath yarn higher in hygroscopicity than the core yarn, the first sheath yarn covering at least a part of a periphery of the core yarn across an axial direction of the core yarn.

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

The invention relates to a microsystem (1) comprising a substrate (12), a bottom electrode (3) arranged on the substrate (12), a ferroelectric layer (4) arranged on the bottom electrode (3), a top electrode (5) arranged on the ferroelectric layer (4) and an isolation layer (6) that is electrically isolating, that is arranged on the top electrode (5), that extends from the top electrode (5) to the substrate (12) so that the isolation layer (6) covers the bottom electrode (3), the ferroelectric layer (4) and the substrate (12) in a region around the complete circumference of the bottom electrode (3), and the isolation layer (6) has the shape of a ring that confines in its centre a through hole (11) that is arranged in the region of the top electrode (5).

A method of making an electrocaloric element includes forming conductive layers on opposing surfaces of a film comprising an electrocaloric material to form an electrocaloric element, wherein the forming of the conductive layers includes one or more of: vapor deposition of the conductive layers under reduced pressure for a duration of time, wherein the duration of time under reduced pressure is less than 240 minutes; vapor deposition of the conductive layers under reduced pressure for a duration of time, wherein the duration of time of exposure to conductive material deposition is less than 240 minutes; vapor deposition of the conductive layers under reduced pressure, wherein the reduced pressure is 10.sup.−8 torr to 500 torr; or maintaining the film at a temperature of less than or equal to 200° C. during forming of the conductive layers.