Depositing gallium nitride and carbon (GaN:C) (e.g., in the form of composite layers) when forming a gallium nitride drain of a transistor provides a buffer between the gallium nitride of the drain and silicon of a substrate in which the drain is formed. As a result, gaps and other defects caused by lattice mismatch are reduced, which improves electrical performance of the drain. Additionally, current leakage into the substrate is reduced, which further improves electrical performance of the drain. Additionally, or alternatively, implanting silicon in an aluminum nitride (AlN) liner for a gallium nitride drain reduces contact resistance at an interface between the gallium nitride and the silicon. As a result, electrical performance of the transistor is improved.

A detector of terahertz (THz) energy includes a MOSFET having an extended source region, and a channel region depleted of free carriers, which MOSFET operates in a sub-threshold voltage state and has an output that is an exponential function of THz energy supplied to the gate.

An electronic device includes a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle. A method of manufacturing the electronic device and the use of the electronic device in photodetector, transistor, phototransistor, optical modulator, electrical diode, photovoltaic cell or electroluminescent component are also described.

Provided are a nanostructure and an optical device including the nanostructure. The nanostructure is formed on a two-dimensional material layer such as graphene and includes nanopatterns having different shapes. The nanopattern may include a first nanopattern and a second nanopattern and may be spherical; cube-shaped; or poly-pyramid-shaped, including a triangular pyramid shape; or polygonal pillar-shaped.

This invention includes quantum dot channel (QDC) Si FETs, which detect infrared radiation to serve as photodetectors. GeOx-cladded Ge quantum dots form the quantum dot channel. An assembly of cladded quantum dots, such as Ge and Si, with thin barrier layers (GeOx and SiOx) form a quantum dot superlattice (QDSL). A QDSL exhibits narrow energy widths of sub-bands (or mini-energy bands) with sub-bands separation ranging 0.2-0.5 eV. The energy separation depends on the barrier thickness (0.5-1 nm) and diameter of quantum dots (3-5 nm). Drain current magnitude in a QDSL layer or quantum dot channel depends on density of electrons in the QD inversion channel, which in turn depends on number of sub-bands participating in the conduction for a given drain voltage VD and gate voltage VG. Infrared photons with energy corresponding to the intra sub-band separation are absorbed as electrons in a lower sub-band make transition to the upper sub-band.

A perovskite composite comprising antimony trifluoride, an electronic element comprising same, and a preparation method therefor are disclosed. The perovskite composite comprises tin (Sn)-based perovskite and antimony trifluoride (SbF.sub.3) so that lead (Pb) is not added thereto, and has a low hole concentration (10.sup.14 cm.sup.1), and thus can be used for an optoelectronic device.

A perovskite composite comprising antimony trifluoride, an electronic element comprising same, and a preparation method therefor are disclosed. The perovskite composite comprises tin (Sn)-based perovskite and antimony trifluoride (SbF.sub.3) so that lead (Pb) is not added thereto, and has a low hole concentration (10.sup.14 cm.sup.1), and thus can be used for an optoelectronic device.

Depositing gallium nitride and carbon (GaN:C) (e.g., in the form of composite layers) when forming a gallium nitride drain of a transistor provides a buffer between the gallium nitride of the drain and silicon of a substrate in which the drain is formed. As a result, gaps and other defects caused by lattice mismatch are reduced, which improves electrical performance of the drain. Additionally, current leakage into the substrate is reduced, which further improves electrical performance of the drain. Additionally, or alternatively, implanting silicon in an aluminum nitride (AlN) liner for a gallium nitride drain reduces contact resistance at an interface between the gallium nitride and the silicon. As a result, electrical performance of the transistor is improved.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

An image sensor device includes nanostructures for improving light absorption efficiency. The image sensor device includes a substrate, a light absorption region, and a nanostructure array. The light absorption region is over the substrate. The nanostructure array us over the light absorption region. The nanostructure array includes a plurality of nanostructures repeatedly arranged from a top view.