A semiconductor device according to an embodiment of the present disclosure includes: a substrate that includes a first surface and a second surface facing each other and includes a first device region and a second device region at which different conductivity types of devices are disposed; a first channel pattern and a second channel pattern that are each disposed above the first surface of the substrate at the first device region and the second device region; an insulating structure that extends in a first direction between the first device region and the second device region; gate structures that surround the first channel pattern and the second channel pattern and extend in a second direction intersecting the first direction; source/drain patterns that are connected to both sides of each of the first channel pattern and the second channel pattern; a lower wire that is disposed on the second surface of the substrate and is connected to at least some of the source/drain patterns and the gate structure disposed at one edge of the first device region; and a device separation film that penetrates the gate structure disposed at the other edge of the first device region.