Patent classifications
H01L35/08
Thermoelectric half-cell and method of production
The present invention relates to a method for manufacturing a thermoelectric half-cell which utilises the metallization for obtaining both the electric and thermal contact required to form a functional thermoelectric cell.
Thermoelectric module
A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.
Thermoelectric module and manufacturing method thereof
A thermoelectric module includes an N-type thermoelectric material and a P-type thermoelectric material disposed so as to be spaced apart from the N-type thermoelectric material. A flexible electrode is electrically connected to the N-type thermoelectric material and the P-type thermoelectric material. The flexible electrode is configured to bend to match a curvature of an object, e.g., a steering wheel of a vehicle.
Method of Manufacturing and Operating Nano-Scale Energy Conversion Device
Embodiments relate to methods of manufacturing and operating nano-scale energy converters and electric power generators. The nano-scale energy converters include two electrodes separated a predetermined distance. The first electrode is manufactured to have a first work function value. The second electrode is manufactured to have a second work function value different from the first work function value. A cavity is formed between the first and second electrodes, and a nanofluid is disposed in the cavity. The nanofluid includes a plurality of nanoparticles.
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH ELECTRIC POWER GENERATION FUNCTION
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with an electric power generation function, which can prevent the circuit board from increasing in size.
MEANS TO SOLVE THE PROBLEM: A semiconductor integrated circuit device 200 with an electric power generation function has a semiconductor integrated circuit device and a thermoelectric element 1. The semiconductor integrated circuit device includes a package 210 to house a semiconductor integrated circuit chip 230. The semiconductor integrated circuit chip 230 has a lower surface opposing the circuit board and an upper surface opposing the mounting surface. The thermoelectric element 1 includes a casing unit having a housing unit, a first electrode unit provided inside the housing unit, a second electrode unit provided inside the housing unit, separated from and opposing the first electrode unit in the first direction, and having a work function different from that of the first electrode unit, and a middle unit provided between the first electrode unit and the second electrode unit, and including a nanoparticle having a work function between the work function of the first electrode unit and the work function of the second electrode unit, in the housing unit. The casing unit is provided on the upper surface side of the semiconductor integrated circuit chip 230.
Thermoelectric module, frame for the same, and vehicle including the thermoelectric module
A thermoelectric module, a frame for the thermoelectric module, and a vehicle including the thermoelectric module is provided. The thermoelectric module includes a frame alternately bent toward a hot side on which a heat source is located and a cool side on which a cooling medium is located, to have a plurality of hot-side end portions in contact with the heat source, a plurality of cool-side end portions in contact with the cooling medium, and a plurality of thermoelectric element installation portions connecting the plurality of hot-side end portions and the plurality of cool-side end portions, a plurality of n-type and p-type thermoelectric elements arranged on the thermoelectric element installation portions, and a plurality of first electrodes and second electrodes that electrically connect, in series, the plurality of n-type and p-type thermoelectric elements arranged on each of the thermoelectric element installation portions.
Thermoelectric module
A thermoelectric module including at least a first and a second thermoelectric element comprising a thermoelectric semiconductor; an electrode connecting the first and second thermoelectric elements; and at least a first and a second joining layer, the first joining layer positioned between the first thermoelectric element and the electrode, and the second joining layer positioned between the second thermoelectric element and the electrode; and at least a first and a second barrier layer including an alloy including Cu, Mo and Ti, the first barrier layer positioned between the first thermoelectric element and the first joining layer, and the second barrier layer positioned between the second thermoelectric element and the second joining layer. The module prevents heat diffusion of the material of the joining layer, preventing the oxidation and deformation of the thermoelectric element under high temperature environment, and exhibiting improved operational stability due to excellent adhesion to a thermoelectric element.
STANNIDE THERMOELECTRIC CONVERSION ELEMENT AND STANNIDE THERMOELECTRIC CONVERSION MODULE
A stannide thermoelectric conversion module includes a thermoelectric conversion element, and an electrode material bonded to the thermoelectric conversion element with a bonding material therebetween, the thermoelectric conversion element is a stannide thermoelectric conversion element including a thermoelectric conversion part containing a stannide compound having composition represented by a general expression Mg.sub.2Si.sub.1-xSn.sub.x (where x satisfies a relation of 0.5<x<1 in the general expression), and a first diffusion prevention layer located on a surface of the thermoelectric conversion part, wherein the first diffusion prevention layer includes an Mo layer, and the bonding material is a non-flowable bonding material having no fluidity.
THERMOELECTRIC CONVERSION SUBSTRATE AND THERMOELECTRIC CONVERSION MODULE
A thermoelectric conversion substrate includes: an insulating substrate including a first surface on one side in a thickness direction of the insulating substrate and a second surface on an opposite side; a plurality of thermoelectric conversion units, each including a first thermoelectric member, a second thermoelectric member, and a first electrode that electrically connects the first thermoelectric member and the second thermoelectric member; and a second electrode. The insulating substrate includes at least one core insulating layer. The second electrode electrically connects the first thermoelectric member of one of the thermoelectric conversion units and the second thermoelectric member of another of the thermoelectric conversion units. The thermoelectric conversion units are electrically connected in series in a manner that the first thermoelectric member and the second thermoelectric member are alternately arranged. A stress relaxation portion is disposed between the first thermoelectric member and the second thermoelectric member.
THERMOELECTRIC MODULE
A thermoelectric module 1 includes: a plurality of electrodes (high temperature side electrodes 11 and low temperature side electrodes 12); thermoelectric conversion elements (p-type element 21 and n-type element 22) arranged between the two electrodes; and a bonding layer 30 disposed between the electrodes and the thermoelectric conversion elements. The bonding layer 30 contains copper-containing particles, copper balls each having a particle diameter of 30 μm or more, an intermetallic compound of copper and tin, and a fired resin.